Abstract
Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott's Transmission Line Model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides.
Original language | Undefined |
---|---|
Title of host publication | Proceedings of the IEEE International Conference on Microelectronic Test Structures (ICMTS) |
Place of Publication | Austin, TX, USA |
Publisher | IEEE |
Pages | 13-17 |
Number of pages | 5 |
ISBN (Print) | 1-4244-0167-4 |
DOIs | |
Publication status | Published - 6 Mar 2006 |
Event | 19th International Conference on Microelectronic Test Structures, ICMTS 2006 - Austin, United States Duration: 6 Mar 2006 → 9 Mar 2006 Conference number: 19 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog06.html |
Publication series
Name | |
---|---|
Publisher | IEEE |
Conference
Conference | 19th International Conference on Microelectronic Test Structures, ICMTS 2006 |
---|---|
Abbreviated title | ICMTS |
Country/Territory | United States |
City | Austin |
Period | 6/03/06 → 9/03/06 |
Internet address |
Keywords
- SC-CICC: Characterization of IC Components
- IR-57653
- METIS-231044
- EWI-2807