Specific Contact Resistance Measurements of Metal Semiconductor-Junctions

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    Abstract

    Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott's Transmission Line Model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides.
    Original languageUndefined
    Title of host publicationProceedings of the IEEE International Conference on Microelectronic Test Structures (ICMTS)
    Place of PublicationAustin, TX, USA
    PublisherIEEE
    Pages13-17
    Number of pages5
    ISBN (Print)1-4244-0167-4
    DOIs
    Publication statusPublished - 6 Mar 2006
    Event19th International Conference on Microelectronic Test Structures, ICMTS 2006 - Austin, United States
    Duration: 6 Mar 20069 Mar 2006
    Conference number: 19
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog06.html

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference19th International Conference on Microelectronic Test Structures, ICMTS 2006
    Abbreviated titleICMTS
    CountryUnited States
    CityAustin
    Period6/03/069/03/06
    Internet address

    Keywords

    • SC-CICC: Characterization of IC Components
    • IR-57653
    • METIS-231044
    • EWI-2807

    Cite this

    Stavitski, N., van Dal, M. J. H., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2006). Specific Contact Resistance Measurements of Metal Semiconductor-Junctions. In Proceedings of the IEEE International Conference on Microelectronic Test Structures (ICMTS) (pp. 13-17). Austin, TX, USA: IEEE. https://doi.org/10.1109/ICMTS.2006.1614265