Specific contact resistance measurements of metal-semiconductor junctions

    Research output: Contribution to conferencePaperAcademic

    Abstract

    Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific metal-to-silicide contact resistance characterization using the Cross-Bridge Kelvin Resistor (CBKR) and Transmission Line Model (TLM), and NiSi as the silicide.
    Original languageUndefined
    Pages52-55
    Number of pages4
    Publication statusPublished - Nov 2005
    Event8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands
    Duration: 17 Nov 200518 Nov 2005
    Conference number: 8

    Workshop

    Workshop8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period17/11/0518/11/05

    Keywords

    • TLM
    • IR-67817
    • silicide
    • Specific contact resistance
    • MOSFET
    • EWI-15730
    • Kelvin structure

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