Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific metal-to-silicide contact resistance characterization using the Cross-Bridge Kelvin Resistor (CBKR) and Transmission Line Model (TLM), and NiSi as the silicide.
|Number of pages||4|
|Publication status||Published - Nov 2005|
|Event||8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands|
Duration: 17 Nov 2005 → 18 Nov 2005
Conference number: 8
|Workshop||8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005|
|Period||17/11/05 → 18/11/05|
- Specific contact resistance
- Kelvin structure
Stavitski, N., van Dal, M. J. H., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2005). Specific contact resistance measurements of metal-semiconductor junctions. 52-55. Paper presented at 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands.