Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers

Qiushi Huang, Meint J. de Boer, J.L.P. Barreaux, D.M. Paardekooper, Toine van den Boogaard, Robbert Wilhelmus Elisabeth van de Kruijs, E. Zoethout, Eric Louis, Frederik Bijkerk

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a significant amount of light at longer wavelengths. This so called out-of-band (OoB) radiation is detrimental for the imaging capabilities of an EUV lithographic imaging system, particularly the ultraviolet (UV) parts of the light (λ=100-400 nm). To suppress these wavelengths while maintaining the high efficiency of the mirror for EUV light, several methods have been developed, including phase-shift gratings (PsG) and anti-reflection layers (SPE layer). Both methods have achieved a suppression factor of 10 - 30 around the target wavelength. To achieve a full band suppression effect with a minimum loss of EUV light, a new scheme based on surface pyramid structures was developed. An average suppression of more than 10 times was achieved with a relative EUV efficiency of 82.2% by using the Si pyramids structure (compared to a flat multilayer (ML)). Recently, we have successfully produced a pyramid structure consisting of multilayers which greatly improves the relative EUV efficiency to 94.2%.
Original languageEnglish
Title of host publicationExtreme Ultraviolet (EUV) Lithography V
Editors Wood, O.R., Panning, E.M.
Place of PublicationSan Jose, CA
PublisherSPIE - The International Society for Optical Engineering
Pages-
DOIs
Publication statusPublished - 2014
EventSPIE Conference on Extreme Ultraviolet (EUV) Lithography V, 2014 - San Jose, United States
Duration: 24 Feb 201427 Feb 2014
Conference number: 5

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9048
ISSN (Print)0277-786X

Conference

ConferenceSPIE Conference on Extreme Ultraviolet (EUV) Lithography V, 2014
CountryUnited States
CitySan Jose
Period24/02/1427/02/14

Fingerprint

ultraviolet reflection
purity
lithography
pyramids
augmentation
retarding
wavelengths
extreme ultraviolet radiation
radiation sources
phase shift
gratings
mirrors
radiation

Keywords

  • Spectral purity
  • EUV multilayer
  • Diffraction
  • Pyramid

Cite this

Huang, Q., de Boer, M. J., Barreaux, J. L. P., Paardekooper, D. M., van den Boogaard, T., van de Kruijs, R. W. E., ... Bijkerk, F. (2014). Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers. In Wood, O.R., & Panning, E.M. (Eds.), Extreme Ultraviolet (EUV) Lithography V (pp. -). (Proceedings of SPIE; Vol. 9048). San Jose, CA: SPIE - The International Society for Optical Engineering. https://doi.org/10.1117/12.2046415
Huang, Qiushi ; de Boer, Meint J. ; Barreaux, J.L.P. ; Paardekooper, D.M. ; van den Boogaard, Toine ; van de Kruijs, Robbert Wilhelmus Elisabeth ; Zoethout, E. ; Louis, Eric ; Bijkerk, Frederik. / Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers. Extreme Ultraviolet (EUV) Lithography V. editor / Wood, O.R. ; Panning, E.M. San Jose, CA : SPIE - The International Society for Optical Engineering, 2014. pp. - (Proceedings of SPIE).
@inproceedings{5b507d75b48640928cade03867659c21,
title = "Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers",
abstract = "Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a significant amount of light at longer wavelengths. This so called out-of-band (OoB) radiation is detrimental for the imaging capabilities of an EUV lithographic imaging system, particularly the ultraviolet (UV) parts of the light (λ=100-400 nm). To suppress these wavelengths while maintaining the high efficiency of the mirror for EUV light, several methods have been developed, including phase-shift gratings (PsG) and anti-reflection layers (SPE layer). Both methods have achieved a suppression factor of 10 - 30 around the target wavelength. To achieve a full band suppression effect with a minimum loss of EUV light, a new scheme based on surface pyramid structures was developed. An average suppression of more than 10 times was achieved with a relative EUV efficiency of 82.2{\%} by using the Si pyramids structure (compared to a flat multilayer (ML)). Recently, we have successfully produced a pyramid structure consisting of multilayers which greatly improves the relative EUV efficiency to 94.2{\%}.",
keywords = "Spectral purity, EUV multilayer, Diffraction, Pyramid",
author = "Qiushi Huang and {de Boer}, {Meint J.} and J.L.P. Barreaux and D.M. Paardekooper and {van den Boogaard}, Toine and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and E. Zoethout and Eric Louis and Frederik Bijkerk",
year = "2014",
doi = "10.1117/12.2046415",
language = "English",
series = "Proceedings of SPIE",
publisher = "SPIE - The International Society for Optical Engineering",
pages = "--",
editor = "{Wood, O.R.} and {Panning, E.M.}",
booktitle = "Extreme Ultraviolet (EUV) Lithography V",

}

Huang, Q, de Boer, MJ, Barreaux, JLP, Paardekooper, DM, van den Boogaard, T, van de Kruijs, RWE, Zoethout, E, Louis, E & Bijkerk, F 2014, Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers. in Wood, O.R. & Panning, E.M. (eds), Extreme Ultraviolet (EUV) Lithography V. Proceedings of SPIE, vol. 9048, SPIE - The International Society for Optical Engineering, San Jose, CA, pp. -, SPIE Conference on Extreme Ultraviolet (EUV) Lithography V, 2014, San Jose, United States, 24/02/14. https://doi.org/10.1117/12.2046415

Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers. / Huang, Qiushi; de Boer, Meint J.; Barreaux, J.L.P.; Paardekooper, D.M.; van den Boogaard, Toine; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Louis, Eric; Bijkerk, Frederik.

Extreme Ultraviolet (EUV) Lithography V. ed. / Wood, O.R.; Panning, E.M. San Jose, CA : SPIE - The International Society for Optical Engineering, 2014. p. - (Proceedings of SPIE; Vol. 9048).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers

AU - Huang, Qiushi

AU - de Boer, Meint J.

AU - Barreaux, J.L.P.

AU - Paardekooper, D.M.

AU - van den Boogaard, Toine

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Zoethout, E.

AU - Louis, Eric

AU - Bijkerk, Frederik

PY - 2014

Y1 - 2014

N2 - Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a significant amount of light at longer wavelengths. This so called out-of-band (OoB) radiation is detrimental for the imaging capabilities of an EUV lithographic imaging system, particularly the ultraviolet (UV) parts of the light (λ=100-400 nm). To suppress these wavelengths while maintaining the high efficiency of the mirror for EUV light, several methods have been developed, including phase-shift gratings (PsG) and anti-reflection layers (SPE layer). Both methods have achieved a suppression factor of 10 - 30 around the target wavelength. To achieve a full band suppression effect with a minimum loss of EUV light, a new scheme based on surface pyramid structures was developed. An average suppression of more than 10 times was achieved with a relative EUV efficiency of 82.2% by using the Si pyramids structure (compared to a flat multilayer (ML)). Recently, we have successfully produced a pyramid structure consisting of multilayers which greatly improves the relative EUV efficiency to 94.2%.

AB - Plasma based radiation sources optimized to emit 13.5 nm Extreme UV radiation also produce a significant amount of light at longer wavelengths. This so called out-of-band (OoB) radiation is detrimental for the imaging capabilities of an EUV lithographic imaging system, particularly the ultraviolet (UV) parts of the light (λ=100-400 nm). To suppress these wavelengths while maintaining the high efficiency of the mirror for EUV light, several methods have been developed, including phase-shift gratings (PsG) and anti-reflection layers (SPE layer). Both methods have achieved a suppression factor of 10 - 30 around the target wavelength. To achieve a full band suppression effect with a minimum loss of EUV light, a new scheme based on surface pyramid structures was developed. An average suppression of more than 10 times was achieved with a relative EUV efficiency of 82.2% by using the Si pyramids structure (compared to a flat multilayer (ML)). Recently, we have successfully produced a pyramid structure consisting of multilayers which greatly improves the relative EUV efficiency to 94.2%.

KW - Spectral purity

KW - EUV multilayer

KW - Diffraction

KW - Pyramid

U2 - 10.1117/12.2046415

DO - 10.1117/12.2046415

M3 - Conference contribution

T3 - Proceedings of SPIE

SP - -

BT - Extreme Ultraviolet (EUV) Lithography V

A2 - Wood, O.R., null

A2 - Panning, E.M., null

PB - SPIE - The International Society for Optical Engineering

CY - San Jose, CA

ER -

Huang Q, de Boer MJ, Barreaux JLP, Paardekooper DM, van den Boogaard T, van de Kruijs RWE et al. Spectral purity enhancement for the EUV Lithography Systems by suppressing UV reflection from multilayers. In Wood, O.R., Panning, E.M., editors, Extreme Ultraviolet (EUV) Lithography V. San Jose, CA: SPIE - The International Society for Optical Engineering. 2014. p. -. (Proceedings of SPIE). https://doi.org/10.1117/12.2046415