Spectromicroscopic insights for rational design of redox-based memristive devices

Christoph Baeumer*, Christoph Schmitz, Amr H.H. Ramadan, Hongchu Du, Katharina Skaja, Vitaliy Feyer, Philipp Muller, Benedikt Arndt, Chun Lin Jia, Joachim Mayer, Roger A. De Souza, Claus Michael Schneider, Rainer Waser, Regina Dittmann

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

91 Citations (Scopus)
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The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti4+ and Ti3+. While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably.

Original languageEnglish
Article number8610
JournalNature communications
Publication statusPublished - 19 Oct 2015
Externally publishedYes


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