The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs¿MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.
|Number of pages||5|
|Journal||Physical review B: Condensed matter and materials physics|
|Publication status||Published - 2005|
- EC Grant Agreement nr.: FP6/505587
Bauer, G. E. W., Tserkovnyak, Y., Brataas, A., Ren, J., Xia, K., Zwierzycki, M., & Kelly, P. J. (2005). Spin accumulation and decay in magnetic Schottky barriers. Physical review B: Condensed matter and materials physics, 72(15), 155304-1-155304-5. https://doi.org/10.1103/PhysRevB.72.155304