Spin accumulation and decay in magnetic Schottky barriers

Gerrit E.W. Bauer, Yaroslav Tserkovnyak, Arne Brataas, Jun Ren, K. Xia, M. Zwierzycki, Paul J. Kelly

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Abstract

The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs¿MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.
Original languageUndefined
Pages (from-to)155304-1-155304-5
Number of pages5
JournalPhysical review B: Condensed matter and materials physics
Volume72
Issue number15
DOIs
Publication statusPublished - 2005

Keywords

  • EC Grant Agreement nr.: FP6/505587
  • IR-52939
  • METIS-224964

Cite this

Bauer, G. E. W., Tserkovnyak, Y., Brataas, A., Ren, J., Xia, K., Zwierzycki, M., & Kelly, P. J. (2005). Spin accumulation and decay in magnetic Schottky barriers. Physical review B: Condensed matter and materials physics, 72(15), 155304-1-155304-5. https://doi.org/10.1103/PhysRevB.72.155304