Spin filling of valley–orbit states in a silicon quantum dot

W.H. Lim, C.H. Yang, F.A. Zwanenburg, A.S. Dzurak

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62 Citations (Scopus)


We report the demonstration of a low-disorder silicon metal–oxide–semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N = 27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley–orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realisation in the near future of spin qubits based on silicon quantum dots.
Original languageEnglish
Article number335704
Number of pages6
Issue number33
Publication statusPublished - 25 Jul 2011
Externally publishedYes


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