Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces

R. Mansell; J.-B. Laloë; S.N. Holmes; P.K.J. Wong; Y.B. Xu; I. Farrer; G.A.C. Jones; D.A. Ritchie; C.H.W. Barnes

doi:10.1063/1.3462435

Spin-injection device prospects for half-metallic Fe₃O₄:Al_0.1Ga_0.9As interfaces

R. Mansell, J.-B. Laloë, S.N. Holmes, P.K.J. Wong, Y.B. Xu, I. Farrer, G.A.C. Jones, D.A. Ritchie, C.H.W. Barnes

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Abstract

Electrical spin-injection across the Fe3O4:Al0.1Ga0.9As interface has been measured. We quantify this effect in an In0.2Ga0.8As:GaAs spin-light emitting diode optical device. The optical polarization signal is maintained from 4.2 up to 200 K without influence of the metal–insulator Verwey transition in the bulk of the Fe3O4 film. An incomplete oxidation at the interface may be detrimental for this device, as it has a similar spin-injection efficiency to that of Fe:Al0.1Ga0.9As. Ambient temperature operation of this device may be possible although the present polarization levels remain too low for practical spintronic applications. We demonstrate the first step in the integration of molecular beam epitaxy-grown magnetic oxides into III–V semiconductor devices.

Original language	Undefined
Pages (from-to)	034507
Number of pages	4
Journal	Journal of Applied Physics
Volume	108
Issue number	3
DOIs	https://doi.org/10.1063/1.3462435
Publication status	Published - 2010

Keywords

EWI-19588
IR-75982
METIS-277537

Access to Document

10.1063/1.3462435

http://eprints.eemcs.utwente.nl/secure2/19588/01/Spin-injection_device_prospects_for_half-metallic.pdf

Cite this

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title = "Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces",

abstract = "Electrical spin-injection across the Fe3O4:Al0.1Ga0.9As interface has been measured. We quantify this effect in an In0.2Ga0.8As:GaAs spin-light emitting diode optical device. The optical polarization signal is maintained from 4.2 up to 200 K without influence of the metal–insulator Verwey transition in the bulk of the Fe3O4 film. An incomplete oxidation at the interface may be detrimental for this device, as it has a similar spin-injection efficiency to that of Fe:Al0.1Ga0.9As. Ambient temperature operation of this device may be possible although the present polarization levels remain too low for practical spintronic applications. We demonstrate the first step in the integration of molecular beam epitaxy-grown magnetic oxides into III–V semiconductor devices.",

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T1 - Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces

AU - Mansell, R.

AU - Laloë, J.-B.

AU - Holmes, S.N.

AU - Wong, P.K.J.

AU - Xu, Y.B.

AU - Farrer, I.

AU - Jones, G.A.C.

AU - Ritchie, D.A.

AU - Barnes, C.H.W.

N1 - 10.1063/1.3462435

PY - 2010

Y1 - 2010

N2 - Electrical spin-injection across the Fe3O4:Al0.1Ga0.9As interface has been measured. We quantify this effect in an In0.2Ga0.8As:GaAs spin-light emitting diode optical device. The optical polarization signal is maintained from 4.2 up to 200 K without influence of the metal–insulator Verwey transition in the bulk of the Fe3O4 film. An incomplete oxidation at the interface may be detrimental for this device, as it has a similar spin-injection efficiency to that of Fe:Al0.1Ga0.9As. Ambient temperature operation of this device may be possible although the present polarization levels remain too low for practical spintronic applications. We demonstrate the first step in the integration of molecular beam epitaxy-grown magnetic oxides into III–V semiconductor devices.

AB - Electrical spin-injection across the Fe3O4:Al0.1Ga0.9As interface has been measured. We quantify this effect in an In0.2Ga0.8As:GaAs spin-light emitting diode optical device. The optical polarization signal is maintained from 4.2 up to 200 K without influence of the metal–insulator Verwey transition in the bulk of the Fe3O4 film. An incomplete oxidation at the interface may be detrimental for this device, as it has a similar spin-injection efficiency to that of Fe:Al0.1Ga0.9As. Ambient temperature operation of this device may be possible although the present polarization levels remain too low for practical spintronic applications. We demonstrate the first step in the integration of molecular beam epitaxy-grown magnetic oxides into III–V semiconductor devices.

KW - EWI-19588

KW - IR-75982

KW - METIS-277537

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DO - 10.1063/1.3462435

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