Abstract
Electrical spin-injection across the Fe3O4:Al0.1Ga0.9As interface has been measured. We quantify
this effect in an In0.2Ga0.8As:GaAs spin-light emitting diode optical device. The optical polarization
signal is maintained from 4.2 up to 200 K without influence of the metal–insulator Verwey transition
in the bulk of the Fe3O4 film. An incomplete oxidation at the interface may be detrimental for this
device, as it has a similar spin-injection efficiency to that of Fe:Al0.1Ga0.9As. Ambient temperature
operation of this device may be possible although the present polarization levels remain too low for
practical spintronic applications. We demonstrate the first step in the integration of molecular beam
epitaxy-grown magnetic oxides into III–V semiconductor devices.
Original language | Undefined |
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Pages (from-to) | 034507 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 108 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2010 |
Keywords
- EWI-19588
- IR-75982
- METIS-277537