Spin injection: materials specific theory

Paul J. Kelly

doi:10.1109/INTMAG.2002.1001250

Spin injection: materials specific theory

Paul J. Kelly

Research output: Contribution to conference › Paper

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Abstract

Summary form only given. The huge scientific and technological impact of spin-transport in metallic materials has stimulated attempts to study it in semiconductors. The difficulties encountered can be explained in terms of a resistor model in which the small spin-dependent resistivity of typical ferromagnetic metals is completely dominated by the large spin-independent resistivity of the semiconductor. This model neglects the spin-dependent interface resistance caused by band mismatch of the two materials, known to be important in GMR. We calculate the spin-dependence of the interface resistance between ferromagnetic metals (such as Fe) and compound semiconductors (such as InAs) from first-principles whereby specular and diffuse scattering are treated on an equal footing. We focus here on the special case of Fe/InAs which forms an ohmic contact and so should work at low bias voltages. We also consider CaB/sub 6/, a semiconductor with a band gap of 0.8 eV, and the effect of La doping. Magnetism in La/sub x/Ca/sub 1-x/B/sub 6/ is found to occur just on the metallic side of a Mott transition in the La-induced impurity band.

Original language	Undefined
DOIs	https://doi.org/10.1109/INTMAG.2002.1001250
Publication status	Published - 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - RAI Congress Center, Amsterdam, Netherlands Duration: 28 Apr 2002 → 2 May 2002

Conference

Conference	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Abbreviated title	INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	28/04/02 → 2/05/02

Keywords

IR-55894

Access to Document

10.1109/INTMAG.2002.1001250

01001250

Cite this

@conference{2a819a528e334693be8aec7a1f48f0f8,

title = "Spin injection: materials specific theory",

abstract = "Summary form only given. The huge scientific and technological impact of spin-transport in metallic materials has stimulated attempts to study it in semiconductors. The difficulties encountered can be explained in terms of a resistor model in which the small spin-dependent resistivity of typical ferromagnetic metals is completely dominated by the large spin-independent resistivity of the semiconductor. This model neglects the spin-dependent interface resistance caused by band mismatch of the two materials, known to be important in GMR. We calculate the spin-dependence of the interface resistance between ferromagnetic metals (such as Fe) and compound semiconductors (such as InAs) from first-principles whereby specular and diffuse scattering are treated on an equal footing. We focus here on the special case of Fe/InAs which forms an ohmic contact and so should work at low bias voltages. We also consider CaB/sub 6/, a semiconductor with a band gap of 0.8 eV, and the effect of La doping. Magnetism in La/sub x/Ca/sub 1-x/B/sub 6/ is found to occur just on the metallic side of a Mott transition in the La-induced impurity band.",

keywords = "IR-55894",

author = "Kelly, \{Paul J.\}",

year = "2002",

doi = "10.1109/INTMAG.2002.1001250",

language = "Undefined",

note = "2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - CONF

T1 - Spin injection: materials specific theory

AU - Kelly, Paul J.

PY - 2002

Y1 - 2002

N2 - Summary form only given. The huge scientific and technological impact of spin-transport in metallic materials has stimulated attempts to study it in semiconductors. The difficulties encountered can be explained in terms of a resistor model in which the small spin-dependent resistivity of typical ferromagnetic metals is completely dominated by the large spin-independent resistivity of the semiconductor. This model neglects the spin-dependent interface resistance caused by band mismatch of the two materials, known to be important in GMR. We calculate the spin-dependence of the interface resistance between ferromagnetic metals (such as Fe) and compound semiconductors (such as InAs) from first-principles whereby specular and diffuse scattering are treated on an equal footing. We focus here on the special case of Fe/InAs which forms an ohmic contact and so should work at low bias voltages. We also consider CaB/sub 6/, a semiconductor with a band gap of 0.8 eV, and the effect of La doping. Magnetism in La/sub x/Ca/sub 1-x/B/sub 6/ is found to occur just on the metallic side of a Mott transition in the La-induced impurity band.

AB - Summary form only given. The huge scientific and technological impact of spin-transport in metallic materials has stimulated attempts to study it in semiconductors. The difficulties encountered can be explained in terms of a resistor model in which the small spin-dependent resistivity of typical ferromagnetic metals is completely dominated by the large spin-independent resistivity of the semiconductor. This model neglects the spin-dependent interface resistance caused by band mismatch of the two materials, known to be important in GMR. We calculate the spin-dependence of the interface resistance between ferromagnetic metals (such as Fe) and compound semiconductors (such as InAs) from first-principles whereby specular and diffuse scattering are treated on an equal footing. We focus here on the special case of Fe/InAs which forms an ohmic contact and so should work at low bias voltages. We also consider CaB/sub 6/, a semiconductor with a band gap of 0.8 eV, and the effect of La doping. Magnetism in La/sub x/Ca/sub 1-x/B/sub 6/ is found to occur just on the metallic side of a Mott transition in the La-induced impurity band.

KW - IR-55894

U2 - 10.1109/INTMAG.2002.1001250

DO - 10.1109/INTMAG.2002.1001250

M3 - Paper

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

ER -