Spin-Momentum Locking in the Gate Tunable Topological Insulator BiSbTeSe2 in Non-Local Transport Measurements

Joris A. Voerman*, Chuan Li, Yingkai Huang, Alexander Brinkman

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The helical spin-momentum locking of an electron in a topological surface state is a feature excellently suited for the use in spintronic applications. Devices are fabricated that allow to generate, transport, and detect the spin-polarization coming from an electronic current in the topological surface state of BiSbTeSe2; a topological insulator reported to have a negligible bulk contribution to its conduction. The successful creation of such a device is described, as is a study of the generated spin-polarized current as the BiSbTeSe2 surface state is gated through its Dirac point. A non-local voltage difference across separated ferromagnetic leads is observed, larger than previously reported in literature. The spin-polarization has a maximum when the Fermi level crosses the Dirac point.

Original languageEnglish
Article number1900334
JournalAdvanced electronic materials
Volume5
Issue number12
Early online date28 Aug 2019
DOIs
Publication statusPublished - 1 Dec 2019

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Keywords

  • UT-Hybrid-D
  • spin-momentum locking
  • Spintronics
  • topological insulators
  • graphene

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