Abstract
The helical spin-momentum locking of an electron in a topological surface state is a feature excellently suited for the use in spintronic applications. Devices are fabricated that allow to generate, transport, and detect the spin-polarization coming from an electronic current in the topological surface state of BiSbTeSe2; a topological insulator reported to have a negligible bulk contribution to its conduction. The successful creation of such a device is described, as is a study of the generated spin-polarized current as the BiSbTeSe2 surface state is gated through its Dirac point. A non-local voltage difference across separated ferromagnetic leads is observed, larger than previously reported in literature. The spin-polarization has a maximum when the Fermi level crosses the Dirac point.
Original language | English |
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Article number | 1900334 |
Journal | Advanced electronic materials |
Volume | 5 |
Issue number | 12 |
Early online date | 28 Aug 2019 |
DOIs | |
Publication status | Published - 1 Dec 2019 |
Keywords
- UT-Hybrid-D
- Spin-momentum locking
- Spintronics
- Topological insulators
- Graphene
- 22/4 OA procedure