Spin polarized La0.7Sr0.3MnO3 thin films on silicon

I. Bergenti; V. Dediu; E. Arisi; M. Cavallini; F. Biscarini; C. Taliani; M. P. de Jong; C. L. Dennis; J. F. Gregg; M. Solzi; M. Natali

doi:10.1016/j.jmmm.2006.11.221

Spin polarized La_0.7Sr_0.3MnO₃ thin films on silicon

I. Bergenti^*, V. Dediu, E. Arisi, M. Cavallini, F. Biscarini, C. Taliani, M. P. de Jong, C. L. Dennis, J. F. Gregg, M. Solzi, M. Natali

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

17 Citations (Scopus)

Abstract

La_0.7Sr_0.3MnO₃ polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiO_x amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiO_x and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed.

Original language	English
Pages (from-to)	453-457
Number of pages	5
Journal	Journal of magnetism and magnetic materials
Volume	312
Issue number	2
DOIs	https://doi.org/10.1016/j.jmmm.2006.11.221
Publication status	Published - May 2007
Externally published	Yes

Keywords

Interface
Manganite
Spintronics
n/a OA procedure

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.jmmm.2006.11.221

Cite this

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title = "Spin polarized La0.7Sr0.3MnO3 thin films on silicon",

abstract = "La0.7Sr0.3MnO3 polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiOx amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiOx and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed.",

keywords = "Interface, Manganite, Spintronics, n/a OA procedure",

author = "I. Bergenti and V. Dediu and E. Arisi and M. Cavallini and F. Biscarini and C. Taliani and {de Jong}, {M. P.} and Dennis, {C. L.} and Gregg, {J. F.} and M. Solzi and M. Natali",

year = "2007",

month = may,

doi = "10.1016/j.jmmm.2006.11.221",

language = "English",

volume = "312",

pages = "453--457",

journal = "Journal of magnetism and magnetic materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Spin polarized La0.7Sr0.3MnO3 thin films on silicon

AU - Bergenti, I.

AU - Dediu, V.

AU - Arisi, E.

AU - Cavallini, M.

AU - Biscarini, F.

AU - Taliani, C.

AU - de Jong, M. P.

AU - Dennis, C. L.

AU - Gregg, J. F.

AU - Solzi, M.

AU - Natali, M.

PY - 2007/5

Y1 - 2007/5

N2 - La0.7Sr0.3MnO3 polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiOx amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiOx and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed.

AB - La0.7Sr0.3MnO3 polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiOx amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiOx and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed.

KW - Interface

KW - Manganite

KW - Spintronics

KW - n/a OA procedure

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U2 - 10.1016/j.jmmm.2006.11.221

DO - 10.1016/j.jmmm.2006.11.221

M3 - Article

AN - SCOPUS:33947285500

SN - 0304-8853

VL - 312

SP - 453

EP - 457

JO - Journal of magnetism and magnetic materials

JF - Journal of magnetism and magnetic materials

IS - 2

ER -