Spin polarized La0.7Sr0.3MnO3 thin films on silicon

  • I. Bergenti*
  • , V. Dediu
  • , E. Arisi
  • , M. Cavallini
  • , F. Biscarini
  • , C. Taliani
  • , M. P. de Jong
  • , C. L. Dennis
  • , J. F. Gregg
  • , M. Solzi
  • , M. Natali
  • *Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

La0.7Sr0.3MnO3 polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiOx amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiOx and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed.

Original languageEnglish
Pages (from-to)453-457
Number of pages5
JournalJournal of magnetism and magnetic materials
Volume312
Issue number2
DOIs
Publication statusPublished - May 2007
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Interface
  • Manganite
  • Spintronics
  • n/a OA procedure

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