Spin-Polarized Transport across Sharp Antiferromagnetic Boundaries

W. Eerenstein*, T. T.M. Palstra, S. S. Saxena, T. Hibma

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)
10 Downloads (Pure)

Abstract

We report spin-polarized transport experiments across antiphase domain boundaries which act as atomically sharp magnetic interfaces. The antiphase boundaries are prepared by growing [Formula presented] epitaxially on MgO, the magnetic coupling over a large fraction of these boundaries being antiferromagnetic. Magnetoresistance measurements yield linear and quadratic field dependence up to the anisotropy field for fields applied parallel and perpendicular to the film plane, respectively. This behavior can be explained by a hopping model in which spin-polarized electrons traverse an antiferromagnetic interface between two ferromagnetic chains.

Original languageEnglish
Number of pages1
JournalPhysical review letters
Volume88
Issue number24
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes

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