Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Andre Dankert, Parham Pashaei, M. Venkata Kamalakar, Anand P. S. Gaur, Satyaprakash Sahoo, Ivan Rungger, Awadhesh Narayan, Kapildeb Dolui, Md. Anamul Hoque, Ram Shanker Patel, Machiel Pieter de Jong, Ram S. Katiyar, Stefano Sanvito, Saroj P. Dash

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    The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.
    Original languageEnglish
    Pages (from-to)6389-6395
    JournalACS nano
    Issue number6
    Publication statusPublished - Jun 2017


    • spin-polarized tunneling
    • multilayer MoS2
    • 2D semiconductor
    • tunnel magnetoresistance
    • density functional theory

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