Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Andre Dankert; Parham Pashaei; M. Venkata Kamalakar; Anand P. S. Gaur; Satyaprakash Sahoo; Ivan Rungger; Awadhesh Narayan; Kapildeb Dolui; Md. Anamul Hoque; Ram Shanker Patel; Machiel Pieter de Jong; Ram S. Katiyar; Stefano Sanvito; Saroj P. Dash

doi:10.1021/acsnano.7b02819

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Andre Dankert, Parham Pashaei, M. Venkata Kamalakar, Anand P. S. Gaur, Satyaprakash Sahoo, Ivan Rungger, Awadhesh Narayan, Kapildeb Dolui, Md. Anamul Hoque, Ram Shanker Patel, Machiel Pieter de Jong, Ram S. Katiyar, Stefano Sanvito, Saroj P. Dash

Research output: Contribution to journal › Article › Academic › peer-review

58 Citations (Scopus)

251 Downloads (Pure)

Abstract

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Original language	English
Pages (from-to)	6389-6395
Journal	ACS nano
Volume	11
Issue number	6
DOIs	https://doi.org/10.1021/acsnano.7b02819
Publication status	Published - Jun 2017

Keywords

spin-polarized tunneling
multilayer MoS2
2D semiconductor
tunnel magnetoresistance
density functional theory

Access to Document

10.1021/acsnano.7b02819

Dankert2017spin-polarizedAccepted author version, 487 KB

Cite this

@article{df666c2bc48b4aeeb925213fe5c12ee3,

title = "Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide",

abstract = "The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.",

keywords = "spin-polarized tunneling, multilayer MoS2, 2D semiconductor, tunnel magnetoresistance, density functional theory",

author = "Andre Dankert and Parham Pashaei and Kamalakar, {M. Venkata} and Gaur, {Anand P. S.} and Satyaprakash Sahoo and Ivan Rungger and Awadhesh Narayan and Kapildeb Dolui and Hoque, {Md. Anamul} and Patel, {Ram Shanker} and {de Jong}, {Machiel Pieter} and Katiyar, {Ram S.} and Stefano Sanvito and Dash, {Saroj P.}",

year = "2017",

month = jun,

doi = "10.1021/acsnano.7b02819",

language = "English",

volume = "11",

pages = "6389--6395",

journal = "ACS nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

AU - Dankert, Andre

AU - Pashaei, Parham

AU - Kamalakar, M. Venkata

AU - Gaur, Anand P. S.

AU - Sahoo, Satyaprakash

AU - Rungger, Ivan

AU - Narayan, Awadhesh

AU - Dolui, Kapildeb

AU - Hoque, Md. Anamul

AU - Patel, Ram Shanker

AU - de Jong, Machiel Pieter

AU - Katiyar, Ram S.

AU - Sanvito, Stefano

AU - Dash, Saroj P.

PY - 2017/6

Y1 - 2017/6

N2 - The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

AB - The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5–2% has been observed, corresponding to spin polarization of 5–10% in the measured temperature range of 300–75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

KW - spin-polarized tunneling

KW - multilayer MoS2

KW - 2D semiconductor

KW - tunnel magnetoresistance

KW - density functional theory

U2 - 10.1021/acsnano.7b02819

DO - 10.1021/acsnano.7b02819

M3 - Article

SN - 1936-0851

VL - 11

SP - 6389

EP - 6395

JO - ACS nano

JF - ACS nano

IS - 6

ER -

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Abstract

Keywords

Access to Document

Fingerprint

Cite this