Spin transport from first-principles: metallic multilayers and a model spin-valve transistor

Mohand Talanana

Research output: ThesisPhD Thesis - Research UT, graduation UT

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Magnetoelectronics is a rapidly growing field where basic research is moving very fast towards smaller structures of nanoscale dimensions and novel materials. Much of the interest in magnetoelectronics is motivated by its potential applications in science and technology. The developments in this field of research are mostly connected to the giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) phenomena. These transport phenomena are based on the up and down spin of electrons, therefore the electronic transport is spin-dependent. Spin-dependent transport will occur naturally in any material for which there is an imbalance in the spin populations at the Fermi energy. Spintronics, or spin electronics, is another fast emerging field. It relies on the active control and manipulation of the spin degree of freedom of electrons, as well as their electrical charge, in semiconductor based devices. By incorporating spin-dependent properties and magnetism in semiconductor based structures, new applications can be achieved which can go beyond magnetoresistive effects in metallic systems.
Original languageEnglish
Awarding Institution
  • University of Twente
  • Kelly, P.J. , Supervisor
Award date12 Jul 2006
Place of PublicationEnschede
Print ISBNs978-90-365-2388-2
Publication statusPublished - 2006


  • IR-57129


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