Spin-valve transistors with high magnetocurrent and 40 mA output current

R. Jansen, H. Gökcan, O.M.J. van 't Erve, F.M. Postma, J.C. Lodder

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    Abstract

    The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how the output current and magnetocurrent depend on the magnitude of the emitter current. Transistors with a different combination of Schottky barriers ~Si/Au and Si/Cu! were used. The collector current rapidly increases with emitter current, without significant loss of magnetocurrent. Spin-valve transistors with magnetocurrent around 400% and high output current up to 40 mA are obtained.
    Original languageUndefined
    Pages (from-to)6927-6929
    Number of pages3
    JournalJournal of Applied Physics
    Volume95
    Issue number11
    Publication statusPublished - 2004

    Keywords

    • IR-62966
    • METIS-218547
    • SMI-NE: From 2006 in EWI-NE
    • EWI-5465

    Cite this

    Jansen, R., Gökcan, H., van 't Erve, O. M. J., Postma, F. M., & Lodder, J. C. (2004). Spin-valve transistors with high magnetocurrent and 40 mA output current. Journal of Applied Physics, 95(11), 6927-6929.