Spin-valve transistors with high magnetocurrent and 40 mA output current

R. Jansen, H. Gökcan, O.M.J. van 't Erve, F.M. Postma, J.C. Lodder

    Research output: Contribution to journalArticleAcademicpeer-review

    10 Citations (Scopus)


    The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how the output current and magnetocurrent depend on the magnitude of the emitter current. Transistors with a different combination of Schottky barriers ~Si/Au and Si/Cu! were used. The collector current rapidly increases with emitter current, without significant loss of magnetocurrent. Spin-valve transistors with magnetocurrent around 400% and high output current up to 40 mA are obtained.
    Original languageUndefined
    Pages (from-to)6927-6929
    Number of pages3
    JournalJournal of Applied Physics
    Issue number11
    Publication statusPublished - 2004


    • IR-62966
    • METIS-218547
    • SMI-NE: From 2006 in EWI-NE
    • EWI-5465

    Cite this