The electrical characteristics of silicon-based spin-valve transistors are reported, focusing on how the output current and magnetocurrent depend on the magnitude of the emitter current. Transistors with a different combination of Schottky barriers ~Si/Au and Si/Cu! were used. The collector current rapidly increases with emitter current, without significant loss of magnetocurrent. Spin-valve transistors with magnetocurrent around 400% and high output current up to 40 mA are obtained.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2004|
- SMI-NE: From 2006 in EWI-NE