TY - JOUR
T1 - Spin/charge density waves at the boundaries of transition metal dichalcogenides
AU - Krishnamurthi, Sridevi
AU - Brocks, Geert
PY - 2020/10/8
Y1 - 2020/10/8
N2 - One-dimensional grain boundaries of two-dimensional semiconducting MX2 (M=Mo,W;X=S,Se) transition metal dichalcogenides are typically metallic at room temperature. The metallicity has its origin in the lattice polarization, which for these lattices with D3h symmetry is a topological invariant, and leads to one-dimensional boundary states inside the band gap. For boundaries perpendicular to the polarization direction, these states are necessarily 1/3 occupied by electrons or holes, making them susceptible to a metal-insulator transition that triples the translation period. Using density-functional-theory calculations, we demonstrate the emergence of combined one-dimensional spin density/charge density waves of that period at the boundary, opening up a small band gap of ∼0.1eV. This unique electronic structure allows for soliton excitations at the boundary that carry a fractional charge of ±1/3e.
AB - One-dimensional grain boundaries of two-dimensional semiconducting MX2 (M=Mo,W;X=S,Se) transition metal dichalcogenides are typically metallic at room temperature. The metallicity has its origin in the lattice polarization, which for these lattices with D3h symmetry is a topological invariant, and leads to one-dimensional boundary states inside the band gap. For boundaries perpendicular to the polarization direction, these states are necessarily 1/3 occupied by electrons or holes, making them susceptible to a metal-insulator transition that triples the translation period. Using density-functional-theory calculations, we demonstrate the emergence of combined one-dimensional spin density/charge density waves of that period at the boundary, opening up a small band gap of ∼0.1eV. This unique electronic structure allows for soliton excitations at the boundary that carry a fractional charge of ±1/3e.
UR - http://www.scopus.com/inward/record.url?scp=85094588670&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.102.161106
DO - 10.1103/PhysRevB.102.161106
M3 - Article
AN - SCOPUS:85094588670
SN - 2469-9950
VL - 102
JO - Physical review B: Covering condensed matter and materials physics
JF - Physical review B: Covering condensed matter and materials physics
IS - 16
M1 - 161106
ER -