Spontaneous direct bonding of thick silicon nitride

Stefan Sanchez, C. Gui, Michael Curt Elwenspoek

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    Wafers with 1 µm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.
    Original languageUndefined
    Pages (from-to)111-113
    Number of pages3
    JournalJournal of micromechanics and microengineering
    Issue number3
    Publication statusPublished - Sep 1997


    • IR-55988
    • EWI-13486

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