Spontaneous direct bonding of thick silicon nitride

Stefan Sanchez; C. Gui; Michael Curt Elwenspoek

doi:10.1088/0960-1317/7/3/007

Spontaneous direct bonding of thick silicon nitride

Stefan Sanchez, C. Gui, Michael Curt Elwenspoek

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Wafers with 1 µm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.

Original language	Undefined
Pages (from-to)	111-113
Number of pages	3
Journal	Journal of micromechanics and microengineering
Volume	7
Issue number	3
DOIs	https://doi.org/10.1088/0960-1317/7/3/007
Publication status	Published - Sep 1997

Keywords

IR-55988
EWI-13486

Access to Document

10.1088/0960-1317/7/3/007

JMMM_7_111
open
sponteneous
open

Cite this

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title = "Spontaneous direct bonding of thick silicon nitride",

abstract = "Wafers with 1 µm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.",

keywords = "IR-55988, EWI-13486",

author = "Stefan Sanchez and C. Gui and Elwenspoek, {Michael Curt}",

year = "1997",

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language = "Undefined",

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pages = "111--113",

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T1 - Spontaneous direct bonding of thick silicon nitride

AU - Sanchez, Stefan

AU - Gui, C.

AU - Elwenspoek, Michael Curt

PY - 1997/9

Y1 - 1997/9

N2 - Wafers with 1 µm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.

AB - Wafers with 1 µm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.

KW - IR-55988

KW - EWI-13486

U2 - 10.1088/0960-1317/7/3/007

DO - 10.1088/0960-1317/7/3/007

M3 - Article

VL - 7

SP - 111

EP - 113

JO - Journal of micromechanics and microengineering

JF - Journal of micromechanics and microengineering

SN - 0960-1317

IS - 3

ER -