Abstract
Wafers with 1 µm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical-mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si-Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.
Original language | Undefined |
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Pages (from-to) | 111-113 |
Number of pages | 3 |
Journal | Journal of micromechanics and microengineering |
Volume | 7 |
Issue number | 3 |
DOIs | |
Publication status | Published - Sep 1997 |
Keywords
- IR-55988
- EWI-13486