Spontaneous formation of an ordered c(4x2)/(2x1) domain pattern on Ge(001)

Henricus J.W. Zandvliet; B.S. Swartzentruber; W.C.U. Wulfhekel; B.J. Hattink; Bene Poelsema

doi:10.1103/PhysRevB.57.R6803

Spontaneous formation of an ordered c(4x2)/(2x1) domain pattern on Ge(001)

Henricus J.W. Zandvliet, B.S. Swartzentruber, W.C.U. Wulfhekel, B.J. Hattink, Bene Poelsema

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Abstract

Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4×2) and (2×1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2×1) and c(4×2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.

Original language	English
Pages (from-to)	6803-6806
Number of pages	4
Journal	Physical review B: Condensed matter and materials physics
Volume	1998
Issue number	57
DOIs	https://doi.org/10.1103/PhysRevB.57.R6803
Publication status	Published - 1998

Keywords

IR-73151
METIS-128660

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10.1103/PhysRevB.57.R6803

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abstract = "Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4×2) and (2×1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2×1) and c(4×2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.",

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AU - Zandvliet, Henricus J.W.

AU - Swartzentruber, B.S.

AU - Wulfhekel, W.C.U.

AU - Hattink, B.J.

AU - Poelsema, Bene

PY - 1998

Y1 - 1998

N2 - Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4×2) and (2×1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2×1) and c(4×2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.

AB - Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4×2) and (2×1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2×1) and c(4×2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.

KW - IR-73151

KW - METIS-128660

U2 - 10.1103/PhysRevB.57.R6803

DO - 10.1103/PhysRevB.57.R6803

M3 - Article

SN - 1098-0121

VL - 1998

SP - 6803

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JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

IS - 57

ER -

Spontaneous formation of an ordered c(4x2)/(2x1) domain pattern on Ge(001)

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