Scanning-tunneling-microscopy measurements of Ge(001) reveal the presence of an ordered domain pattern consisting of c(4×2) and (2×1) domains arranged in stripes with a width of several dimer row spacings, oriented along the dimer rows. We suggest that the existence of a soft domain wall between the domains combined with a difference in the stress component along the dimer bond for the (2×1) and c(4×2) domains, respectively, can conspire to produce such an ordered domain phase. A simple model based on strain relaxation explains the observed size of the domain pattern.
|Number of pages||4|
|Journal||Physical review B: Condensed matter and materials physics|
|Publication status||Published - 1998|
Zandvliet, H. J. W., Swartzentruber, B. S., Wulfhekel, W. C. U., Hattink, B. J., & Poelsema, B. (1998). Spontaneous formation of an ordered c(4x2)/(2x1) domain pattern on Ge(001). Physical review B: Condensed matter and materials physics, 1998(57), 6803-6806. https://doi.org/10.1103/PhysRevB.57.R6803