Sputter-deposited neodymium-doped aluminium oxide for waveguide amplifiers in the O-band

B. Jongebloed; C.E. Osornio-Martinez; K. Wang; M.  Dijkstra; S.M.  García-Blanco

doi:10.1117/12.3041788

Sputter-deposited neodymium-doped aluminium oxide for waveguide amplifiers in the O-band

B. Jongebloed
, C.E. Osornio-Martinez
, K. Wang
, M. Dijkstra
, S.M. García-Blanco

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

The Al₂O₃ waveguide platform is an excellent candidate for monolithic and scalable fabrication of waveguide amplifiers. After successful demonstrations of sputter-deposited waveguides doped with Er³⁺, Yb³⁺ and Tm³⁺ ions, gain in the O-band is sought by means of Nd³⁺ ions, which form a four-level gain medium at a wavelength of 1330 nm. Preliminary results have shown on-chip gain of approximately 17 dB in a 7.52 cm long channel waveguide at 1064 nm. In this work, the optimization of Nd3+ doped Al₂O₃ optical waveguides to achieve net gain in the O-band is discussed.

Original language	English
Title of host publication	Integrated Optics: Devices, Materials, and Technologies XXIX
Subtitle of host publication	Proceedings Volume
Editors	Sonia M. García-Blanco, Pavel Cheben
Publisher	SPIE
Volume	PC13369
DOIs	https://doi.org/10.1117/12.3041788
Publication status	Published - 19 Mar 2025
Event	SPIE Photonics West 2025 - Moscone Centre, San Francisco, United States Duration: 28 Jan 2025 → 30 Jan 2025

Conference

Conference	SPIE Photonics West 2025
Country/Territory	United States
City	San Francisco
Period	28/01/25 → 30/01/25

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10.1117/12.3041788

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@inproceedings{ee89752b016d4413a8f06d4b6799b579,

title = "Sputter-deposited neodymium-doped aluminium oxide for waveguide amplifiers in the O-band",

abstract = "The Al2O3 waveguide platform is an excellent candidate for monolithic and scalable fabrication of waveguide amplifiers. After successful demonstrations of sputter-deposited waveguides doped with Er3+, Yb3+ and Tm3+ ions, gain in the O-band is sought by means of Nd3+ ions, which form a four-level gain medium at a wavelength of 1330 nm. Preliminary results have shown on-chip gain of approximately 17 dB in a 7.52 cm long channel waveguide at 1064 nm. In this work, the optimization of Nd3+ doped Al2O3 optical waveguides to achieve net gain in the O-band is discussed.",

author = "B. Jongebloed and C.E. Osornio-Martinez and K. Wang and M. Dijkstra and S.M. Garc{\'i}a-Blanco",

note = "{\textcopyright} (2025) Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).; SPIE Photonics West 2025 ; Conference date: 28-01-2025 Through 30-01-2025",

year = "2025",

month = mar,

day = "19",

doi = "10.1117/12.3041788",

language = "English",

volume = "PC13369",

editor = "Garc{\'i}a-Blanco, \{Sonia M.\} and Pavel Cheben",

booktitle = "Integrated Optics: Devices, Materials, and Technologies XXIX",

publisher = "SPIE",

address = "United States",

}

Jongebloed, B, Osornio-Martinez, CE, Wang, K , Dijkstra, M & García-Blanco, SM 2025, Sputter-deposited neodymium-doped aluminium oxide for waveguide amplifiers in the O-band. in SM García-Blanco & P Cheben (eds), Integrated Optics: Devices, Materials, and Technologies XXIX: Proceedings Volume. vol. PC13369, SPIE, SPIE Photonics West 2025, San Francisco, California, United States, 28/01/25. https://doi.org/10.1117/12.3041788

Sputter-deposited neodymium-doped aluminium oxide for waveguide amplifiers in the O-band. / Jongebloed, B.; Osornio-Martinez, C.E.; Wang, K. et al.
Integrated Optics: Devices, Materials, and Technologies XXIX: Proceedings Volume. ed. / Sonia M. García-Blanco; Pavel Cheben. Vol. PC13369 SPIE, 2025.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Sputter-deposited neodymium-doped aluminium oxide for waveguide amplifiers in the O-band

AU - Jongebloed, B.

AU - Osornio-Martinez, C.E.

AU - Wang, K.

AU - Dijkstra, M.

AU - García-Blanco, S.M.

PY - 2025/3/19

Y1 - 2025/3/19

N2 - The Al2O3 waveguide platform is an excellent candidate for monolithic and scalable fabrication of waveguide amplifiers. After successful demonstrations of sputter-deposited waveguides doped with Er3+, Yb3+ and Tm3+ ions, gain in the O-band is sought by means of Nd3+ ions, which form a four-level gain medium at a wavelength of 1330 nm. Preliminary results have shown on-chip gain of approximately 17 dB in a 7.52 cm long channel waveguide at 1064 nm. In this work, the optimization of Nd3+ doped Al2O3 optical waveguides to achieve net gain in the O-band is discussed.

AB - The Al2O3 waveguide platform is an excellent candidate for monolithic and scalable fabrication of waveguide amplifiers. After successful demonstrations of sputter-deposited waveguides doped with Er3+, Yb3+ and Tm3+ ions, gain in the O-band is sought by means of Nd3+ ions, which form a four-level gain medium at a wavelength of 1330 nm. Preliminary results have shown on-chip gain of approximately 17 dB in a 7.52 cm long channel waveguide at 1064 nm. In this work, the optimization of Nd3+ doped Al2O3 optical waveguides to achieve net gain in the O-band is discussed.

U2 - 10.1117/12.3041788

DO - 10.1117/12.3041788

M3 - Conference contribution

VL - PC13369

BT - Integrated Optics: Devices, Materials, and Technologies XXIX

A2 - García-Blanco, Sonia M.

A2 - Cheben, Pavel

PB - SPIE

T2 - SPIE Photonics West 2025

Y2 - 28 January 2025 through 30 January 2025

ER -

Sputter-deposited neodymium-doped aluminium oxide for waveguide amplifiers in the O-band

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