Sputtering yields of Ru, Mo and Si under low energy Ar+ bombardment

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Abstract

Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.
Original languageUndefined
Pages (from-to)054902-1-054902-6
Number of pages6
JournalJournal of Applied Physics
Volume106
Issue number5
DOIs
Publication statusPublished - 2009

Keywords

  • METIS-265957
  • IR-72900

Cite this