Sputtering yields of Ru, Mo and Si under low energy Ar+ bombardment

Shiou-Min Wu, Robbert van de Kruijs, Erwin Zoethout, Fred Bijkerk

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Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.
Original languageEnglish
Article number054902
Number of pages6
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 2009


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