Sputtering yields of Ru, Mo and Si under low energy Ar+ bombardment

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.
Original languageUndefined
Pages (from-to)054902-1-054902-6
Number of pages6
JournalJournal of applied physics
Volume106
Issue number5
DOIs
Publication statusPublished - 2009

Keywords

  • METIS-265957
  • IR-72900

Cite this

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title = "Sputtering yields of Ru, Mo and Si under low energy Ar+ bombardment",
abstract = "Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.",
keywords = "METIS-265957, IR-72900",
author = "Shiou-Min Wu and {van de Kruijs}, {Robbert Wilhelmus Elisabeth} and E. Zoethout and Frederik Bijkerk",
year = "2009",
doi = "10.1063/1.3149777",
language = "Undefined",
volume = "106",
pages = "054902--1--054902--6",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "5",

}

Sputtering yields of Ru, Mo and Si under low energy Ar+ bombardment. / Wu, Shiou-Min; van de Kruijs, Robbert Wilhelmus Elisabeth; Zoethout, E.; Bijkerk, Frederik.

In: Journal of applied physics, Vol. 106, No. 5, 2009, p. 054902-1-054902-6.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Sputtering yields of Ru, Mo and Si under low energy Ar+ bombardment

AU - Wu, Shiou-Min

AU - van de Kruijs, Robbert Wilhelmus Elisabeth

AU - Zoethout, E.

AU - Bijkerk, Frederik

PY - 2009

Y1 - 2009

N2 - Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.

AB - Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.

KW - METIS-265957

KW - IR-72900

U2 - 10.1063/1.3149777

DO - 10.1063/1.3149777

M3 - Article

VL - 106

SP - 054902-1-054902-6

JO - Journal of applied physics

JF - Journal of applied physics

SN - 0021-8979

IS - 5

ER -