Ion sputtering yields for Ru, Mo, and Si under Ar+ ion bombardment in the near-threshold energy range have been studied using an in situ weight-loss method with a Kaufman ion source, Faraday cup, and quartz crystal microbalance. The results are compared to theoretical models. The accuracy of the in situ weight-loss method was verified by thickness-decrease measurements using grazing incidence x-ray reflectometry, and results from both methods are in good agreement. These results provide accurate data sets for theoretical modeling in the near-threshold sputter regime and are of relevance for (optical) surfaces exposed to plasmas, as, for instance, in extreme ultraviolet photolithography.
Wu, S-M., van de Kruijs, R. W. E., Zoethout, E., & Bijkerk, F. (2009). Sputtering yields of Ru, Mo and Si under low energy Ar+ bombardment. Journal of Applied Physics, 106(5), 054902-1-054902-6. https://doi.org/10.1063/1.3149777