Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment

L. Shi*, L. K. Nanver, S. N. Nihtianov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen radicals (H*). In this paper, we report excellent robustness to detrimental working conditions of a Si-based boron-doped ultra shallow junction photodiode (B-layer diode) fabricated by a pure boron chemical vapor deposition (CVD) technology. A series of surface cleaning tests with filament-enhanced H* confirm that the performance of the B-layer diode is stable with only a minor change of the electrical characteristics.

Original languageEnglish
Title of host publicationIECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society
Pages2651-2656
Number of pages6
DOIs
Publication statusPublished - 1 Dec 2011
Externally publishedYes
Event37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011 - Melbourne, Australia
Duration: 7 Nov 201110 Nov 2011
Conference number: 37

Conference

Conference37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011
Abbreviated titleIECON 2011
CountryAustralia
CityMelbourne
Period7/11/1110/11/11

Keywords

  • extreme-ultraviolet (EUV) radiation
  • H* cleaning
  • photodiodes
  • responsivity
  • ultrashallow junctions

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