Abstract
In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen radicals (H*). In this paper, we report excellent robustness to detrimental working conditions of a Si-based boron-doped ultra shallow junction photodiode (B-layer diode) fabricated by a pure boron chemical vapor deposition (CVD) technology. A series of surface cleaning tests with filament-enhanced H* confirm that the performance of the B-layer diode is stable with only a minor change of the electrical characteristics.
Original language | English |
---|---|
Title of host publication | IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society |
Pages | 2651-2656 |
Number of pages | 6 |
DOIs | |
Publication status | Published - 1 Dec 2011 |
Externally published | Yes |
Event | 37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011 - Melbourne, VIC, Australia, Melbourne, Australia Duration: 7 Nov 2011 → 10 Nov 2011 Conference number: 37 |
Conference
Conference | 37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011 |
---|---|
Abbreviated title | IECON 2011 |
Country/Territory | Australia |
City | Melbourne |
Period | 7/11/11 → 10/11/11 |
Keywords
- extreme-ultraviolet (EUV) radiation
- H* cleaning
- photodiodes
- responsivity
- ultrashallow junctions