Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment

L. Shi; L. K. Nanver; S. N. Nihtianov

doi:10.1109/IECON.2011.6119729

Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment

L. Shi^*, L. K. Nanver, S. N. Nihtianov

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

10 Citations (Scopus)

Abstract

In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen radicals (H*). In this paper, we report excellent robustness to detrimental working conditions of a Si-based boron-doped ultra shallow junction photodiode (B-layer diode) fabricated by a pure boron chemical vapor deposition (CVD) technology. A series of surface cleaning tests with filament-enhanced H* confirm that the performance of the B-layer diode is stable with only a minor change of the electrical characteristics.

Original language	English
Title of host publication	IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society
Pages	2651-2656
Number of pages	6
DOIs	https://doi.org/10.1109/IECON.2011.6119729
Publication status	Published - 1 Dec 2011
Externally published	Yes
Event	37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011 - Melbourne, VIC, Australia, Melbourne, Australia Duration: 7 Nov 2011 → 10 Nov 2011 Conference number: 37

Conference

Conference	37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011
Abbreviated title	IECON 2011
Country/Territory	Australia
City	Melbourne
Period	7/11/11 → 10/11/11

Keywords

extreme-ultraviolet (EUV) radiation
H* cleaning
photodiodes
responsivity
ultrashallow junctions

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10.1109/IECON.2011.6119729

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@inproceedings{e9ab6a7acdd44157a190ef2be1db0b7e,

title = "Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment",

abstract = "In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen radicals (H*). In this paper, we report excellent robustness to detrimental working conditions of a Si-based boron-doped ultra shallow junction photodiode (B-layer diode) fabricated by a pure boron chemical vapor deposition (CVD) technology. A series of surface cleaning tests with filament-enhanced H* confirm that the performance of the B-layer diode is stable with only a minor change of the electrical characteristics.",

keywords = "extreme-ultraviolet (EUV) radiation, H* cleaning, photodiodes, responsivity, ultrashallow junctions",

author = "L. Shi and Nanver, {L. K.} and Nihtianov, {S. N.}",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/IECON.2011.6119729",

language = "English",

isbn = "9781612849720",

pages = "2651--2656",

booktitle = "IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society",

note = "37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011, IECON 2011 ; Conference date: 07-11-2011 Through 10-11-2011",

}

Shi, L, Nanver, LK & Nihtianov, SN 2011, Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment. in IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society., 6119729, pp. 2651-2656, 37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011, Melbourne, Victoria, Australia, 7/11/11. https://doi.org/10.1109/IECON.2011.6119729

Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment. / Shi, L.; Nanver, L. K.; Nihtianov, S. N.
IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society. 2011. p. 2651-2656 6119729.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment

AU - Shi, L.

AU - Nanver, L. K.

AU - Nihtianov, S. N.

N1 - Conference code: 37

PY - 2011/12/1

Y1 - 2011/12/1

N2 - In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen radicals (H*). In this paper, we report excellent robustness to detrimental working conditions of a Si-based boron-doped ultra shallow junction photodiode (B-layer diode) fabricated by a pure boron chemical vapor deposition (CVD) technology. A series of surface cleaning tests with filament-enhanced H* confirm that the performance of the B-layer diode is stable with only a minor change of the electrical characteristics.

AB - In industrial applications based on extreme-ultraviolet (EUV) radiation, a periodic cleaning of the surface of the used EUV photodetectors is required to prevent the build up of carbon contaminating layers [1][2][3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation EUV lithography [4]. One way to do this is to use aggressive gasses, such as hydrogen radicals (H*). In this paper, we report excellent robustness to detrimental working conditions of a Si-based boron-doped ultra shallow junction photodiode (B-layer diode) fabricated by a pure boron chemical vapor deposition (CVD) technology. A series of surface cleaning tests with filament-enhanced H* confirm that the performance of the B-layer diode is stable with only a minor change of the electrical characteristics.

KW - extreme-ultraviolet (EUV) radiation

KW - H cleaning

KW - photodiodes

KW - responsivity

KW - ultrashallow junctions

UR - http://www.scopus.com/inward/record.url?scp=84856574979&partnerID=8YFLogxK

U2 - 10.1109/IECON.2011.6119729

DO - 10.1109/IECON.2011.6119729

M3 - Conference contribution

AN - SCOPUS:84856574979

SN - 9781612849720

SP - 2651

EP - 2656

BT - IECON 2011 - 37th Annual Conference of the IEEE Industrial Electronics Society

T2 - 37th Annual Conference of the IEEE Industrial Electronics Society, IECON 2011

Y2 - 7 November 2011 through 10 November 2011

ER -

Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment

Abstract

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Keywords

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