Abstract
Interfacial chemistry at indium tin oxide/polymer interfaces is of fundamental importance for the performance of polymer-based light emitting diodes. X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry are used to investigate the stability of the interface formed between indium tin oxide and (i) the light emitting polymer poly(p-phenylenevinylene), and (ii) the hole injecting layer poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. The formed interfaces are not stable and indium-containing species diffuse from the metal oxide surface into the polymer layers.
| Original language | English |
|---|---|
| Pages (from-to) | 315-326 |
| Number of pages | 12 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 747 |
| DOIs | |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics 2002 - Boston, MA, United States Duration: 2 Dec 2002 → 4 Dec 2002 |
Keywords
- n/a OA procedure
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