Stability of oriented silicalite-1 films in view of zeolite membrane preparation

M.J. den Exter, H. van Bekkum, C.J.M. van Rijn, F. Kapteijn, J.A. Moulijn, H. Schellevis, C.I.N. Beenakker

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    Abstract

    Silicalite-1 is grown as b- and (a, b)-oriented monolayers on silicon wafers and on silicon wafers containing low-stress silicon nitride windows, aiming at two new membrane systems. The orientation of crystals determines the stability (crack formation), due to tensile or compressive stress, imposed on the layer after removal of the organic template. By application of etching procedures, the nitride support can be removed, leaving the crystal layer undamaged. The latter makes preparation of oriented and nonsupported thin layers for gas separation purposes possible.
    Original languageEnglish
    Pages (from-to)13-20
    JournalZeolites
    Volume19
    Issue number1
    DOIs
    Publication statusPublished - 1997

    Keywords

    • METIS-111501
    • IR-14228

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