Static semifluxons in a long Josephson junction with π-discontinuity points

H. Susanto; S.A. van Gils; T.P.P. Visser; null Ariando; H.J.H. Smilde; H. Hilgenkamp

doi:10.1103/PhysRevB.68.104501

Static semifluxons in a long Josephson junction with π-discontinuity points

H. Susanto, S.A. van Gils, T.P.P. Visser, Ariando, H.J.H. Smilde, H. Hilgenkamp

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We investigate analytically a long Josephson junction with several $\pi$-discontinuity points characterized by a jump of $\pi$ in the phase difference of the junction. The system is described by a perturbed-combined sine-Gordon equation. Via phase-portrait analysis, it is shown how the existence of static semifluxons localized around the discontinuity points is influenced by the applied bias current. In junctions with more than one corner, there is a minimum-facet-length for semifluxons to be spontaneously generated. A stability analysis is used to obtain the minimum-facet-length for multicorner junctions.

Original language	English
Pages (from-to)	104501
Number of pages	8
Journal	Physical review B: Condensed matter and materials physics
Volume	68
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.68.104501
Publication status	Published - 2003

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title = "Static semifluxons in a long Josephson junction with π-discontinuity points",

abstract = "We investigate analytically a long Josephson junction with several $\pi$-discontinuity points characterized by a jump of $\pi$ in the phase difference of the junction. The system is described by a perturbed-combined sine-Gordon equation. Via phase-portrait analysis, it is shown how the existence of static semifluxons localized around the discontinuity points is influenced by the applied bias current. In junctions with more than one corner, there is a minimum-facet-length for semifluxons to be spontaneously generated. A stability analysis is used to obtain the minimum-facet-length for multicorner junctions.",

author = "H. Susanto and {van Gils}, S.A. and T.P.P. Visser and Ariando and H.J.H. Smilde and H. Hilgenkamp",

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T1 - Static semifluxons in a long Josephson junction with π-discontinuity points

AU - Susanto, H.

AU - van Gils, S.A.

AU - Visser, T.P.P.

AU - Ariando, null

AU - Smilde, H.J.H.

AU - Hilgenkamp, H.

PY - 2003

Y1 - 2003

N2 - We investigate analytically a long Josephson junction with several $\pi$-discontinuity points characterized by a jump of $\pi$ in the phase difference of the junction. The system is described by a perturbed-combined sine-Gordon equation. Via phase-portrait analysis, it is shown how the existence of static semifluxons localized around the discontinuity points is influenced by the applied bias current. In junctions with more than one corner, there is a minimum-facet-length for semifluxons to be spontaneously generated. A stability analysis is used to obtain the minimum-facet-length for multicorner junctions.

AB - We investigate analytically a long Josephson junction with several $\pi$-discontinuity points characterized by a jump of $\pi$ in the phase difference of the junction. The system is described by a perturbed-combined sine-Gordon equation. Via phase-portrait analysis, it is shown how the existence of static semifluxons localized around the discontinuity points is influenced by the applied bias current. In junctions with more than one corner, there is a minimum-facet-length for semifluxons to be spontaneously generated. A stability analysis is used to obtain the minimum-facet-length for multicorner junctions.

U2 - 10.1103/PhysRevB.68.104501

DO - 10.1103/PhysRevB.68.104501

M3 - Article

SN - 1098-0121

VL - 68

SP - 104501

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

IS - 10

ER -

Static semifluxons in a long Josephson junction with π-discontinuity points

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