Abstract
The study of low-frequency noise in MOSFETs is gaining importance with reducing
device dimensions. The effect of low-frequency noise is not just confined at low frequencies
but it is also up-converted to Radio Frequencies (RF) in electronic circuits like
oscillators and mixers. Hence the modeling of this low-frequency noise and techniques
to reduce its effect are important. It has been reported in literature that the low-frequency
noise in MOSFETs decreases significantly under changing gate bias. Unfortunately, the
circuit simulators available do not model this behavior. In this thesis the low-frequency
noise in MOSFETs under steady-state and dynamic biasing conditions was investigated.
The low-frequency noise in MOSFETs dominated by RTS noise is the most sensitive to
biasing changes. While periodic large-signal excitation is successfully used to reduce the
LF noise dominated by RTS, it also occurs in some samples that the low-frequency noise
increases because the normally ‘dormant’ traps under steady-state conditions get ‘active’
as a result of the dynamic biasing. The RTS noise is the dominant noise source in both
n-type as well as p-type sub-micron MOSFETs. Time-domain RTS measurements lead
to a better understanding of the RTS noise. The time-domain analysis was used to extract
the RTS parameters under periodic large-signal excitation, which ....
Original language | English |
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Awarding Institution |
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Award date | 27 Jan 2005 |
Place of Publication | Enschede |
Publisher | |
Print ISBNs | 90-365-2127-0 |
Publication status | Published - 27 Jan 2005 |
Keywords
- METIS-227984
- EWI-15715
- IR-48261