Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions

M. Hoek, F. Coneri, N. Poccia, X. Wang, X. Ke, G. van Tendeloo, H. Hilgenkamp*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)
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Abstract

Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3°tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

Original languageEnglish
Article number086101
JournalAPL materials
Volume3
Issue number8
DOIs
Publication statusPublished - 1 Aug 2015

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Crystal structure
Transmission electron microscopy
Scanning
X ray diffraction
Thin films
Scanning electron microscopy
Electrons

Cite this

Hoek, M. ; Coneri, F. ; Poccia, N. ; Wang, X. ; Ke, X. ; van Tendeloo, G. ; Hilgenkamp, H. / Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions. In: APL materials. 2015 ; Vol. 3, No. 8.
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abstract = "Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3°tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.",
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Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions. / Hoek, M.; Coneri, F.; Poccia, N.; Wang, X.; Ke, X.; van Tendeloo, G.; Hilgenkamp, H.

In: APL materials, Vol. 3, No. 8, 086101, 01.08.2015.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions

AU - Hoek, M.

AU - Coneri, F.

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AU - Wang, X.

AU - Ke, X.

AU - van Tendeloo, G.

AU - Hilgenkamp, H.

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AB - Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3°tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

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