Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions

M. Hoek; F. Coneri; N. Poccia; X. Renshaw Wang; X. Ke; G. van Tendeloo; H. Hilgenkamp

doi:10.1063/1.4927796

Strain accommodation through facet matching in La_1.85Sr_0.15CuO₄/Nd_1.85Ce_0.15CuO₄ ramp-edge junctions

M. Hoek, F. Coneri, N. Poccia, X. Renshaw Wang, X. Ke, G. van Tendeloo, H. Hilgenkamp^*

^*Corresponding author for this work

Interfaces and Correlated Electron Systems

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd_1.85Ce_0.15CuO₄ and superconducting hole-doped La_1.85Sr_0.15CuO₄ thin films, the latter being the top layer. On the ramp, a new growth mode of La_1.85Sr_0.15CuO₄ with a 3.3°tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

Original language	English
Article number	086101
Journal	APL materials
Volume	3
Issue number	8
DOIs	https://doi.org/10.1063/1.4927796
Publication status	Published - 1 Aug 2015

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@article{934386e95d18421a8d65b9368e428b68,

title = "Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions",

abstract = "Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3°tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.",

author = "M. Hoek and F. Coneri and N. Poccia and {Renshaw Wang}, X. and X. Ke and {van Tendeloo}, G. and H. Hilgenkamp",

year = "2015",

month = aug,

day = "1",

doi = "10.1063/1.4927796",

language = "English",

volume = "3",

journal = "APL materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Strain accommodation through facet matching in La1.85Sr0.15CuO4/Nd1.85Ce0.15CuO4 ramp-edge junctions

AU - Hoek, M.

AU - Coneri, F.

AU - Poccia, N.

AU - Renshaw Wang, X.

AU - Ke, X.

AU - van Tendeloo, G.

AU - Hilgenkamp, H.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3°tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

AB - Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3°tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84938632210&partnerID=8YFLogxK

U2 - 10.1063/1.4927796

DO - 10.1063/1.4927796

M3 - Article

SN - 2166-532X

VL - 3

JO - APL materials

JF - APL materials

IS - 8

M1 - 086101

ER -

Strain accommodation through facet matching in La_1.85Sr_0.15CuO₄/Nd_1.85Ce_0.15CuO₄ ramp-edge junctions

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