Strain and conduction-band offset in narrow n-type finFETs

T. van Hemert; B. Kaleli; Raymond Josephus Engelbart Hueting; D. Esseni; M.J.H. van Dal; Jurriaan Schmitz

doi:10.1109/TED.2013.2241765

Strain and conduction-band offset in narrow n-type finFETs

T. van Hemert, B. Kaleli, Raymond Josephus Engelbart Hueting, D. Esseni, M.J.H. van Dal, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

3 Citations (Scopus)

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Abstract

In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account both strain and quantum confinement. We estimate the complete strain tensor for the scarce strain measurement points available with finite-element-method simulations of the thermal expansion effect. We found an inhomogeneous compressive strain that increases for smaller fin widths. The experimental CB offset is extracted from temperature-dependent transfer characteristics. The results show a lowering of the CB edge up to 40 meV for fin widths down to 5 nm. These experimental observations compare well with the model, and hence, the band offset can be explained by both quantum confinement and strain.

Original language	Undefined
Pages (from-to)	1005-1010
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	3
DOIs	https://doi.org/10.1109/TED.2013.2241765
Publication status	Published - 1 Mar 2013

Keywords

EWI-23255
quantum wells
Leakage current
Semiconductor device measurement
IR-85427
Stress
Thermal expansion
Double-gate FETs
METIS-296396
Strain

Access to Document

10.1109/TED.2013.2241765

http://eprints.eemcs.utwente.nl/secure2/23255/01/Hemert_Trans_El_Dev.pdf

Cite this

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title = "Strain and conduction-band offset in narrow n-type finFETs",

abstract = "In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account both strain and quantum confinement. We estimate the complete strain tensor for the scarce strain measurement points available with finite-element-method simulations of the thermal expansion effect. We found an inhomogeneous compressive strain that increases for smaller fin widths. The experimental CB offset is extracted from temperature-dependent transfer characteristics. The results show a lowering of the CB edge up to 40 meV for fin widths down to 5 nm. These experimental observations compare well with the model, and hence, the band offset can be explained by both quantum confinement and strain.",

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T1 - Strain and conduction-band offset in narrow n-type finFETs

AU - van Hemert, T.

AU - Kaleli, B.

AU - Hueting, Raymond Josephus Engelbart

AU - Esseni, D.

AU - van Dal, M.J.H.

AU - Schmitz, Jurriaan

N1 - eemcs-eprint-23255

PY - 2013/3/1

Y1 - 2013/3/1

N2 - In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account both strain and quantum confinement. We estimate the complete strain tensor for the scarce strain measurement points available with finite-element-method simulations of the thermal expansion effect. We found an inhomogeneous compressive strain that increases for smaller fin widths. The experimental CB offset is extracted from temperature-dependent transfer characteristics. The results show a lowering of the CB edge up to 40 meV for fin widths down to 5 nm. These experimental observations compare well with the model, and hence, the band offset can be explained by both quantum confinement and strain.

AB - In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account both strain and quantum confinement. We estimate the complete strain tensor for the scarce strain measurement points available with finite-element-method simulations of the thermal expansion effect. We found an inhomogeneous compressive strain that increases for smaller fin widths. The experimental CB offset is extracted from temperature-dependent transfer characteristics. The results show a lowering of the CB edge up to 40 meV for fin widths down to 5 nm. These experimental observations compare well with the model, and hence, the band offset can be explained by both quantum confinement and strain.

KW - EWI-23255

KW - quantum wells

KW - Leakage current

KW - Semiconductor device measurement

KW - IR-85427

KW - Stress

KW - Thermal expansion

KW - Double-gate FETs

KW - METIS-296396

KW - Strain

U2 - 10.1109/TED.2013.2241765

DO - 10.1109/TED.2013.2241765

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