Strain and conduction-band offset in narrow n-type finFETs

T. van Hemert, B. Kaleli, Raymond Josephus Engelbart Hueting, D. Esseni, M.J.H. van Dal, Jurriaan Schmitz

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    In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account both strain and quantum confinement. We estimate the complete strain tensor for the scarce strain measurement points available with finite-element-method simulations of the thermal expansion effect. We found an inhomogeneous compressive strain that increases for smaller fin widths. The experimental CB offset is extracted from temperature-dependent transfer characteristics. The results show a lowering of the CB edge up to 40 meV for fin widths down to 5 nm. These experimental observations compare well with the model, and hence, the band offset can be explained by both quantum confinement and strain.
    Original languageUndefined
    Pages (from-to)1005-1010
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Issue number3
    Publication statusPublished - 1 Mar 2013


    • EWI-23255
    • quantum wells
    • Leakage current
    • Semiconductor device measurement
    • IR-85427
    • Stress
    • Thermal expansion
    • Double-gate FETs
    • METIS-296396
    • Strain

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