Strain characterization of FinFETs using Raman spectroscopy

B. Kaleli, T. van Hemert, Raymond Josephus Engelbart Hueting, Robertus A.M. Wolters

    Research output: Contribution to journalConference articleAcademicpeer-review

    3 Citations (Scopus)
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    Metal induced strain in the channel region of silicon (Si) fin-field effect transistor (FinFET) devices has been characterized using Raman spectroscopy. The strain originates from the difference in thermal expansion coefficient of Si and titanium-nitride. The Raman map of the device region is used to determine strain in the channel after preparing the device with the focused ion beam milling. Using the Raman peak shift relative to that of relaxed Si, compressive strain values up to – 0.88% have been obtained for a 5 nm wide silicon fin. The strain is found to increase with reducing fin width though it scales less than previously reported results from holographic interferometry. In addition, finite-element method (FEM) simulations have been utilized to analyze the amount of strain generated after thermal processing. It is shown that obtained FEM simulated strain values are in good agreement with the calculated strain values obtained from Raman spectroscopy
    Original languageEnglish
    Pages (from-to)57-61
    Number of pages5
    JournalThin solid films
    Publication statusPublished - 31 Aug 2013
    EventE-MRS Spring Meeting 2012 - Strasbourg, France
    Duration: 14 May 201218 May 2012


    • FEM
    • Silicon
    • Raman spectroscopy
    • Strain
    • FinFET
    • EWI-23025
    • METIS-297600
    • IR-87018
    • TiN


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