TY - JOUR
T1 - Strained interface layer contributions to the structural and electronic properties of epitaxial V2O3films
AU - Hajihoseini, Hamidreza
AU - Thorsteinsson, Einar B.
AU - Sigurjonsdottir, Vilborg V.
AU - Arnalds, Unnar B.
PY - 2021/4/19
Y1 - 2021/4/19
N2 - We report on the transport properties of epitaxial vanadium sesquioxide (V2O3) thin films with thicknesses in the range of 1 to 120 nm. Films with the thickness down to nanometer values reveal clear resistivity curves with temperature illustrating that even at these thicknesses, the films are above the percolation threshold and continuous over large distances. The results reveal that with the reducing thickness, the resistivity of the films increases sharply for thicknesses below 4 nm and the metal-insulator transition (MIT) is quenched. We attribute this increase to a strained interface layer of thickness ∼ 4 nm with in-plane lattice parameters corresponding to the Al2O3 substrate. The interface layer displays a suppressed MIT shifted to higher temperatures and has a room temperature resistivity 6 orders of magnitude higher than the thicker V2O3 films.
AB - We report on the transport properties of epitaxial vanadium sesquioxide (V2O3) thin films with thicknesses in the range of 1 to 120 nm. Films with the thickness down to nanometer values reveal clear resistivity curves with temperature illustrating that even at these thicknesses, the films are above the percolation threshold and continuous over large distances. The results reveal that with the reducing thickness, the resistivity of the films increases sharply for thicknesses below 4 nm and the metal-insulator transition (MIT) is quenched. We attribute this increase to a strained interface layer of thickness ∼ 4 nm with in-plane lattice parameters corresponding to the Al2O3 substrate. The interface layer displays a suppressed MIT shifted to higher temperatures and has a room temperature resistivity 6 orders of magnitude higher than the thicker V2O3 films.
UR - http://www.scopus.com/inward/record.url?scp=85104604346&partnerID=8YFLogxK
U2 - 10.1063/5.0043941
DO - 10.1063/5.0043941
M3 - Article
AN - SCOPUS:85104604346
SN - 0003-6951
VL - 118
JO - Applied physics letters
JF - Applied physics letters
IS - 16
M1 - 161602
ER -