Strained interface layer contributions to the structural and electronic properties of epitaxial V2O3films

Hamidreza Hajihoseini, Einar B. Thorsteinsson, Vilborg V. Sigurjonsdottir, Unnar B. Arnalds*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We report on the transport properties of epitaxial vanadium sesquioxide (V2O3) thin films with thicknesses in the range of 1 to 120 nm. Films with the thickness down to nanometer values reveal clear resistivity curves with temperature illustrating that even at these thicknesses, the films are above the percolation threshold and continuous over large distances. The results reveal that with the reducing thickness, the resistivity of the films increases sharply for thicknesses below 4 nm and the metal-insulator transition (MIT) is quenched. We attribute this increase to a strained interface layer of thickness ∼ 4 nm with in-plane lattice parameters corresponding to the Al2O3 substrate. The interface layer displays a suppressed MIT shifted to higher temperatures and has a room temperature resistivity 6 orders of magnitude higher than the thicker V2O3 films.

Original languageEnglish
Article number161602
JournalApplied physics letters
Volume118
Issue number16
DOIs
Publication statusPublished - 19 Apr 2021

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