Stress-Induced Leakage Current in p+ Poly MOS Capacitors

V.E. Houtsma, J. Holleman, Cora Salm, F.P. Widdershoven, P.H. Woerlee

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationVeldhoven, the Netherlands
    Publication statusPublished - 15 Dec 1998

    Keywords

    • METIS-114887

    Cite this

    Houtsma, V. E., Holleman, J., Salm, C., Widdershoven, F. P., & Woerlee, P. H. (1998, Dec 15). Stress-Induced Leakage Current in p+ Poly MOS Capacitors. Veldhoven, the Netherlands.