Strong efficiency improvement of SOI-LEDs through carrier confinement

T. Hoang, P. Le Minh, J. Holleman, Jurriaan Schmitz

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    Contemporary silicon light-emitting diodes in silicon-on-insulator (SOI) technology suffer from poor efficiency compared to their bulk-silicon counterparts. In this letter, we present a new device structure where the carrier injection takes place through silicon slabs of only a few nanometer thick. Its external quantum efficiency of 1.4 • 10−4 at room temperature, with a spectrum peaking at 1130 nm, is almost two orders higher than reported thus far on SOI. The structure diminishes the dominant role of nonradiative recombination at the n+ and p+contacts, by confining the injected carriers in an SOI peninsula. With this approach, a compact infrared light source can be fabricated using standard semiconductor processing steps.
    Original languageUndefined
    Article number10.1109/LED.2007.895415
    Pages (from-to)383-385
    Number of pages3
    JournalIEEE electron device letters
    Issue numberWP07-01/5
    Publication statusPublished - May 2007


    • EWI-9720
    • IR-67077
    • METIS-241602
    • SC-SBLE: Silicon-based Light Emitters

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