Structural and electronic properties of the α-GeSe surface

Zhen Jiao, Qirong Yao, Liliana M. Balescu, Qijun Liu, Bin Tang, Harold J.W. Zandvliet (Corresponding Author)

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Abstract

We have investigated the structural and electronic properties of the α-GeSe surface using atomic force microscopy, scanning tunneling microscopy and density functional theory calculations. GeSe belongs to the group-VI transition metal monochalcogenides and occurs in two polymorphs, α-GeSe and β-GeSe. The most redundant polymorph, α-GeSe, has a structure that is very similar to black phosphorene. The α-GeSe surface has a centered rectangular unit cell with dimensions a = 3.8 Å and b = 4.4 Å respectively. In scanning tunneling microscopy images only the Se atoms are resolved owing to the substantial transfer of electrons from the Ge to the Se surface atoms. This experimental finding is fully in line with density functional theory calculations. Scanning tunneling spectroscopy reveals that the α-GeSe surface is a p-type semiconductor with a band gap of 1.0 eV. The GeSe surface is stable at ambient conditions, which makes this material very appealing for technological applications.

Original languageEnglish
Pages (from-to)17-21
Number of pages5
JournalSurface science
Volume686
Early online date27 Mar 2019
DOIs
Publication statusPublished - 1 Aug 2019

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Electronic properties
Structural properties
electronics
Scanning tunneling microscopy
Polymorphism
Density functional theory
scanning tunneling microscopy
density functional theory
Atoms
p-type semiconductors
Transition metals
atoms
Atomic force microscopy
Energy gap
transition metals
atomic force microscopy
Spectroscopy
Semiconductor materials
Scanning
scanning

Keywords

  • Scanning tunneling microscopy
  • Semiconductor
  • Transition metal monochalcogenide

Cite this

Jiao, Zhen ; Yao, Qirong ; Balescu, Liliana M. ; Liu, Qijun ; Tang, Bin ; Zandvliet, Harold J.W. / Structural and electronic properties of the α-GeSe surface. In: Surface science. 2019 ; Vol. 686. pp. 17-21.
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abstract = "We have investigated the structural and electronic properties of the α-GeSe surface using atomic force microscopy, scanning tunneling microscopy and density functional theory calculations. GeSe belongs to the group-VI transition metal monochalcogenides and occurs in two polymorphs, α-GeSe and β-GeSe. The most redundant polymorph, α-GeSe, has a structure that is very similar to black phosphorene. The α-GeSe surface has a centered rectangular unit cell with dimensions a = 3.8 {\AA} and b = 4.4 {\AA} respectively. In scanning tunneling microscopy images only the Se atoms are resolved owing to the substantial transfer of electrons from the Ge to the Se surface atoms. This experimental finding is fully in line with density functional theory calculations. Scanning tunneling spectroscopy reveals that the α-GeSe surface is a p-type semiconductor with a band gap of 1.0 eV. The GeSe surface is stable at ambient conditions, which makes this material very appealing for technological applications.",
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Structural and electronic properties of the α-GeSe surface. / Jiao, Zhen; Yao, Qirong; Balescu, Liliana M.; Liu, Qijun; Tang, Bin; Zandvliet, Harold J.W. (Corresponding Author).

In: Surface science, Vol. 686, 01.08.2019, p. 17-21.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Structural and electronic properties of the α-GeSe surface

AU - Jiao, Zhen

AU - Yao, Qirong

AU - Balescu, Liliana M.

AU - Liu, Qijun

AU - Tang, Bin

AU - Zandvliet, Harold J.W.

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N2 - We have investigated the structural and electronic properties of the α-GeSe surface using atomic force microscopy, scanning tunneling microscopy and density functional theory calculations. GeSe belongs to the group-VI transition metal monochalcogenides and occurs in two polymorphs, α-GeSe and β-GeSe. The most redundant polymorph, α-GeSe, has a structure that is very similar to black phosphorene. The α-GeSe surface has a centered rectangular unit cell with dimensions a = 3.8 Å and b = 4.4 Å respectively. In scanning tunneling microscopy images only the Se atoms are resolved owing to the substantial transfer of electrons from the Ge to the Se surface atoms. This experimental finding is fully in line with density functional theory calculations. Scanning tunneling spectroscopy reveals that the α-GeSe surface is a p-type semiconductor with a band gap of 1.0 eV. The GeSe surface is stable at ambient conditions, which makes this material very appealing for technological applications.

AB - We have investigated the structural and electronic properties of the α-GeSe surface using atomic force microscopy, scanning tunneling microscopy and density functional theory calculations. GeSe belongs to the group-VI transition metal monochalcogenides and occurs in two polymorphs, α-GeSe and β-GeSe. The most redundant polymorph, α-GeSe, has a structure that is very similar to black phosphorene. The α-GeSe surface has a centered rectangular unit cell with dimensions a = 3.8 Å and b = 4.4 Å respectively. In scanning tunneling microscopy images only the Se atoms are resolved owing to the substantial transfer of electrons from the Ge to the Se surface atoms. This experimental finding is fully in line with density functional theory calculations. Scanning tunneling spectroscopy reveals that the α-GeSe surface is a p-type semiconductor with a band gap of 1.0 eV. The GeSe surface is stable at ambient conditions, which makes this material very appealing for technological applications.

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