Abstract
We studied the structure and optical properties of B4C∕Mo∕Y∕Si multilayer systems. Using extended x-ray absorption fine structure measurements at the Y and Mo K-edge, the structure of the subnanometer thick Y layer and the underlying Mo layer were analyzed. It was found that even a 0.2 nm thick Y layer significantly reduced silicon diffusion toward Mo, thus reducing Mo silicide formation. Hard x-ray
reflectometry showed that the difference in average interface roughness of the B4C∕Mo∕Y∕Si multilayer structure compared to Mo/Si and B4C∕Mo∕B4C∕Si multilayer structures was negligible. Soft x-ray reflectometry showed optical improvement of B4C∕Mo∕Y∕Si with respect to Mo/Si and B4C∕Mo∕B4C∕Si multilayer structures.
| Original language | English |
|---|---|
| Pages (from-to) | 8541-8548 |
| Number of pages | 8 |
| Journal | Applied Optics |
| Volume | 51 |
| Issue number | 36 |
| DOIs | |
| Publication status | Published - 20 Dec 2012 |
Keywords
- METIS-294176
- IR-84108
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