Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors

Zixiong Sun*, Sizhao Huang*, Wenxuan Zhu, Yorick A. Birkhölzer, Xing Gao, Romar Angelo Avila, Houbing Huang*, Xiaojie Lou, Evert P. Houwman, Minh D. Nguyen*, Gertjan Koster, Guus Rijnders*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

2 Citations (Scopus)
13 Downloads (Pure)

Abstract

BaTiO3 thin films with different annealing times were grown on LSMO/STO (001) substrates by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the interfacial layer in BaTiO3 was detected in the x-ray diffraction results, and the ordered-unordered-ordered lattice transformation caused by oxygen vacancies’ filling was thought to be the reason. The ferroelectric domain was also confirmed to form during such an annealing process according to the piezoresponse force microscopy, transmission electron microscopy, and phase-field simulation. A Ti-displacement-rotation region considered an intermediate structure during the domain formation was observed at the interfacial layer of the 5.5-min-annealing film. Because of the oxygen deficiency and the effect of ferroelectric domain modulation of the built-in barrier height, a good memristive behavior with a resistive switching ratio of 1916 was obtained in the 10-min-annealing BaTiO3 (BTO) film, offering an avenue toward the application of oxygen-deficient BTO in neural network applications.

Original languageEnglish
Article number101129
Number of pages9
JournalAPL materials
Volume11
Issue number10
Early online date25 Oct 2023
DOIs
Publication statusPublished - Oct 2023

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