Study of Dynamic Processes on Semiconductor Surfaces using Time-Resolved Scanning Tunneling Microscopy

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Abstract

The time resolution of a conventional scanning tunneling microscope can be improved by many orders of magnitude by recording open feedback loop current–time traces. The enhanced time resolution comes, however, at the expense of the ability to obtain spatial information. In this paper, we first consider the Ge(111)-c(2 × 8) surface as an example of how surface dynamics can show up in conventional STM images. After a brief introduction to the time-resolved scanning tunneling microscopy technique, its capabilities will be demonstrated by addressing the dynamics of a dimer pair of a Pt modified Ge(001).
Original languageUndefined
Pages (from-to)264007-
JournalJournal of physics: Condensed matter
Volume22
Issue number26
DOIs
Publication statusPublished - 2010

Keywords

  • METIS-266600
  • IR-72803

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