Study of laser die release by Q-switched Nd:YAG laser pulses

N. Karlitskaya, D.F. de Lange, J. Meijer, Rene Sanders

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

15 Citations (Scopus)

Abstract

A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.
Original languageEnglish
Title of host publicationHigh-Power Laser Ablation V
EditorsClaude R. Phipps
Place of PublicationBellingham, WA, USA
PublisherSPIE
Pages935-943
Number of pages9
ISBN (Print)0-8194-5371-4
DOIs
Publication statusPublished - 25 Apr 2004

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume5448
ISSN (Print)0277-786X

Fingerprint

Q switched lasers
YAG lasers
pulses
lasers
silicon
assembling
manufacturing
high speed
laser beams
damage
irradiation
thresholds
predictions
electronics

Keywords

  • METIS-220901
  • IR-96140

Cite this

Karlitskaya, N., de Lange, D. F., Meijer, J., & Sanders, R. (2004). Study of laser die release by Q-switched Nd:YAG laser pulses. In C. R. Phipps (Ed.), High-Power Laser Ablation V (pp. 935-943). (Proceedings of SPIE; Vol. 5448). Bellingham, WA, USA: SPIE. https://doi.org/10.1117/12.546674
Karlitskaya, N. ; de Lange, D.F. ; Meijer, J. ; Sanders, Rene. / Study of laser die release by Q-switched Nd:YAG laser pulses. High-Power Laser Ablation V. editor / Claude R. Phipps. Bellingham, WA, USA : SPIE, 2004. pp. 935-943 (Proceedings of SPIE).
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abstract = "A new laser-assisted process called {"}Laser Die Transfer{"} is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.",
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Karlitskaya, N, de Lange, DF, Meijer, J & Sanders, R 2004, Study of laser die release by Q-switched Nd:YAG laser pulses. in CR Phipps (ed.), High-Power Laser Ablation V. Proceedings of SPIE, vol. 5448, SPIE, Bellingham, WA, USA, pp. 935-943. https://doi.org/10.1117/12.546674

Study of laser die release by Q-switched Nd:YAG laser pulses. / Karlitskaya, N.; de Lange, D.F.; Meijer, J.; Sanders, Rene.

High-Power Laser Ablation V. ed. / Claude R. Phipps. Bellingham, WA, USA : SPIE, 2004. p. 935-943 (Proceedings of SPIE; Vol. 5448).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.

AB - A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.

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Karlitskaya N, de Lange DF, Meijer J, Sanders R. Study of laser die release by Q-switched Nd:YAG laser pulses. In Phipps CR, editor, High-Power Laser Ablation V. Bellingham, WA, USA: SPIE. 2004. p. 935-943. (Proceedings of SPIE). https://doi.org/10.1117/12.546674