Study of laser die release by Q-switched Nd:YAG laser pulses

N. Karlitskaya; D.F. de Lange; J. Meijer; Rene Sanders

doi:10.1117/12.546674

Study of laser die release by Q-switched Nd:YAG laser pulses

N. Karlitskaya
, D.F. de Lange
, J. Meijer
, Rene Sanders

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

21 Citations (Scopus)

14 Downloads (Pure)

Abstract

A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.

Original language	English
Title of host publication	High-Power Laser Ablation V
Editors	Claude R. Phipps
Place of Publication	Bellingham, WA, USA
Publisher	SPIE
Pages	935-943
Number of pages	9
ISBN (Print)	0-8194-5371-4
DOIs	https://doi.org/10.1117/12.546674
Publication status	Published - 25 Apr 2004
Event	High-power laser ablation V - Taos, NM, USA Duration: 25 Apr 2004 → 30 Apr 2004

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	5448
ISSN (Print)	0277-786X

Conference

Conference	High-power laser ablation V
Period	25/04/04 → 30/04/04
Other	25-30 April 2004

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

METIS-220901
IR-96140

Access to Document

10.1117/12.546674

Cite this

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title = "Study of laser die release by Q-switched Nd:YAG laser pulses",

abstract = "A new laser-assisted process called {"}Laser Die Transfer{"} is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.",

keywords = "METIS-220901, IR-96140",

author = "N. Karlitskaya and \{de Lange\}, D.F. and J. Meijer and Rene Sanders",

year = "2004",

month = apr,

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doi = "10.1117/12.546674",

language = "English",

isbn = "0-8194-5371-4",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "935--943",

editor = "Phipps, \{Claude R.\}",

booktitle = "High-Power Laser Ablation V",

address = "United States",

note = "High-power laser ablation V ; Conference date: 25-04-2004 Through 30-04-2004",

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T1 - Study of laser die release by Q-switched Nd:YAG laser pulses

AU - Karlitskaya, N.

AU - de Lange, D.F.

AU - Meijer, J.

AU - Sanders, Rene

PY - 2004/4/25

Y1 - 2004/4/25

N2 - A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.

AB - A new laser-assisted process called "Laser Die Transfer" is developed for high speed assembling of miniature electronic components. Silicon dies, fabricated on an optically transparent carrier are released using a laser pulse. This process has the potential to offer major advantages compared to existing transfer processes for future needs: high manufacturing speeds, contact-free, ability to handle very small and thin components. In this paper we present a thermal model, which describes the nonlinear behavior of silicon and carrier material under the influence of 1064 nm laser irradiation. The threshold intensities for die release and silicon damage will be explored as a function of operating laser beam characteristics. Experimental verification is presented to compare the simulated predictions and experimental results for the die release process.

KW - METIS-220901

KW - IR-96140

U2 - 10.1117/12.546674

DO - 10.1117/12.546674

M3 - Conference contribution

SN - 0-8194-5371-4

T3 - Proceedings of SPIE

SP - 935

EP - 943

BT - High-Power Laser Ablation V

A2 - Phipps, Claude R.

PB - SPIE

CY - Bellingham, WA, USA

T2 - High-power laser ablation V

Y2 - 25 April 2004 through 30 April 2004

ER -

Study of laser die release by Q-switched Nd:YAG laser pulses

Abstract

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UN SDGs

Keywords

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