Study of pocket implant parameters for 0,18 um CMOS

J. Schmitz*, Y.V. Ponomarev, A.H. Montree, P.H. Woerlee

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)
    34 Downloads (Pure)

    Abstract

    PMOS and NMOS transistors for the 0.18 μm CMOS generation with pocket punch-through stoppers are presented. A detailed study of the dose and angle of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear optimum is found when threshold voltage rolloff and subthreshold swing are evaluated, leading to the best performance in terms of Ion/Ioff ratio.

    Original languageEnglish
    Title of host publicationESSDERC'97
    Subtitle of host publicationproceedings of the 27th European Solid-State Device Research Conference : Stuttgart, Germany, 22-24 September 1997
    EditorsHerbert Grunbacher
    Place of PublicationPiscataway, NJ
    PublisherIEEE Computer Society
    Pages224-227
    Number of pages4
    ISBN (Electronic)2-86332-221-4
    DOIs
    Publication statusPublished - 1 Jan 1997
    Event27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany
    Duration: 22 Sep 199724 Sep 1997
    Conference number: 27

    Conference

    Conference27th European Solid-State Device Research Conference, ESSDERC 1997
    Abbreviated titleESSDERC 1997
    CountryGermany
    CityStuttgart
    Period22/09/9724/09/97

    Keywords

    • Implants
    • Scanning electron microscopy
    • Etching
    • Length measurement
    • Lithography
    • Electron beams
    • Transistors
    • MOSFETs
    • Intrusion detection
    • MOS devices

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