Study of pocket implant parameters for 0,18 um CMOS

J. Schmitz; Y.V. Ponomarev; A.H. Montree; P.H. Woerlee

doi:10.1109/ESSDERC.1997.194406

Study of pocket implant parameters for 0,18 um CMOS

J. Schmitz^*
, Y.V. Ponomarev
, A.H. Montree
, P.H. Woerlee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

676 Downloads (Pure)

Abstract

PMOS and NMOS transistors for the 0.18 μm CMOS generation with pocket punch-through stoppers are presented. A detailed study of the dose and angle of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear optimum is found when threshold voltage rolloff and subthreshold swing are evaluated, leading to the best performance in terms of I_on/I_off ratio.

Original language	English
Title of host publication	ESSDERC'97
Subtitle of host publication	proceedings of the 27th European Solid-State Device Research Conference : Stuttgart, Germany, 22-24 September 1997
Editors	Herbert Grunbacher
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	224-227
Number of pages	4
ISBN (Electronic)	2-86332-221-4
DOIs	https://doi.org/10.1109/ESSDERC.1997.194406
Publication status	Published - 1 Jan 1997
Event	27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Germany Duration: 22 Sept 1997 → 24 Sept 1997 Conference number: 27

Conference

Conference	27th European Solid-State Device Research Conference, ESSDERC 1997
Abbreviated title	ESSDERC 1997
Country/Territory	Germany
City	Stuttgart
Period	22/09/97 → 24/09/97

Keywords

Implants
Scanning electron microscopy
Etching
Length measurement
Lithography
Electron beams
Transistors
MOSFETs
Intrusion detection
MOS devices

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10.1109/ESSDERC.1997.194406

1997_proc_essderc_schmitzSubmitted version, 59.5 KBLicence: Unspecified

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@inproceedings{eb6d1684675c4e62b4e5a7751b1c4226,

title = "Study of pocket implant parameters for 0,18 um CMOS",

abstract = "PMOS and NMOS transistors for the 0.18 μm CMOS generation with pocket punch-through stoppers are presented. A detailed study of the dose and angle of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear optimum is found when threshold voltage rolloff and subthreshold swing are evaluated, leading to the best performance in terms of Ion/Ioff ratio.",

keywords = "Implants, Scanning electron microscopy, Etching, Length measurement, Lithography, Electron beams, Transistors, MOSFETs, Intrusion detection, MOS devices",

author = "J. Schmitz and Y.V. Ponomarev and A.H. Montree and P.H. Woerlee",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.1997.194406",

language = "English",

pages = "224--227",

editor = "Herbert Grunbacher",

booktitle = "ESSDERC'97",

publisher = "IEEE",

address = "United States",

note = "27th European Solid-State Device Research Conference, ESSDERC 1997, ESSDERC 1997 ; Conference date: 22-09-1997 Through 24-09-1997",

}

Schmitz, J, Ponomarev, YV, Montree, AH & Woerlee, PH 1997, Study of pocket implant parameters for 0,18 um CMOS. in H Grunbacher (ed.), ESSDERC'97: proceedings of the 27th European Solid-State Device Research Conference : Stuttgart, Germany, 22-24 September 1997. IEEE, Piscataway, NJ, pp. 224-227, 27th European Solid-State Device Research Conference, ESSDERC 1997, Stuttgart, Germany, 22/09/97. https://doi.org/10.1109/ESSDERC.1997.194406

Study of pocket implant parameters for 0,18 um CMOS. / Schmitz, J.; Ponomarev, Y.V.; Montree, A.H. et al.
ESSDERC'97: proceedings of the 27th European Solid-State Device Research Conference : Stuttgart, Germany, 22-24 September 1997. ed. / Herbert Grunbacher. Piscataway, NJ: IEEE, 1997. p. 224-227.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Study of pocket implant parameters for 0,18 um CMOS

AU - Schmitz, J.

AU - Ponomarev, Y.V.

AU - Montree, A.H.

AU - Woerlee, P.H.

N1 - Conference code: 27

PY - 1997/1/1

Y1 - 1997/1/1

N2 - PMOS and NMOS transistors for the 0.18 μm CMOS generation with pocket punch-through stoppers are presented. A detailed study of the dose and angle of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear optimum is found when threshold voltage rolloff and subthreshold swing are evaluated, leading to the best performance in terms of Ion/Ioff ratio.

AB - PMOS and NMOS transistors for the 0.18 μm CMOS generation with pocket punch-through stoppers are presented. A detailed study of the dose and angle of the pocket implants is presented, showing that these implant conditions do not affect the long-channel S and VT, nor the substrate current. A clear optimum is found when threshold voltage rolloff and subthreshold swing are evaluated, leading to the best performance in terms of Ion/Ioff ratio.

KW - Implants

KW - Scanning electron microscopy

KW - Etching

KW - Length measurement

KW - Lithography

KW - Electron beams

KW - Transistors

KW - MOSFETs

KW - Intrusion detection

KW - MOS devices

UR - https://www.scopus.com/pages/publications/84907552169

U2 - 10.1109/ESSDERC.1997.194406

DO - 10.1109/ESSDERC.1997.194406

M3 - Conference contribution

AN - SCOPUS:84907552169

SP - 224

EP - 227

BT - ESSDERC'97

A2 - Grunbacher, Herbert

PB - IEEE

CY - Piscataway, NJ

T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997

Y2 - 22 September 1997 through 24 September 1997

ER -

Study of pocket implant parameters for 0,18 um CMOS

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Keywords

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