Study of sharp bends in anisotropic potassium double tungstate waveguides

T. Dubbink, Mustafa Sefünç, Markus Pollnau, Sonia Maria García Blanco

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

1 Citation (Scopus)

Abstract

Rare earth ion doped potassium double tungstate gain materials have recently shown a great promise for the development of waveguide amplifiers and lasers exhibiting excellent performance. To enable the use of this material in larger nanophotonic platforms, sharp bends are required. In this work we study the effect of the anisotropy of potassium double tungstates on the bend losses of high contrast waveguides using three different simulation methods. It is concluded that the existence of this anisotropy has not detrimental effect on the bend losses, therefore opening the door to the utilization of this material for integrated nanophotonics.
Original languageUndefined
Title of host publication15th International Conference on Transparent Optical Networks, ICTON 2013
Place of PublicationUSA
PublisherIEEE
PagesPaper Th.B2.4
Number of pages4
ISBN (Print)978-1-4799-0682-6
DOIs
Publication statusPublished - Jun 2013
Event15th International Conference on Transparent Optical Networks, ICTON 2013 - Cartagena, Spain
Duration: 23 Jun 201327 Jun 2013
Conference number: 15

Publication series

Name2161-2056
PublisherIEEE

Conference

Conference15th International Conference on Transparent Optical Networks, ICTON 2013
Abbreviated titleICTON
CountrySpain
CityCartagena
Period23/06/1327/06/13

Keywords

  • EWI-25670
  • anisotropic material
  • monoclinic
  • sharp bends
  • finite differences
  • IR-89628
  • IOMS-APD: Active Photonic Devices
  • Rare-earth ions
  • FDTD
  • METIS-301915
  • potassium double tungstates

Cite this

Dubbink, T., Sefünç, M., Pollnau, M., & García Blanco, S. M. (2013). Study of sharp bends in anisotropic potassium double tungstate waveguides. In 15th International Conference on Transparent Optical Networks, ICTON 2013 (pp. Paper Th.B2.4). (2161-2056). USA: IEEE. https://doi.org/10.1109/ICTON.2013.6603056