Study of the reduced In2O3/μc‐Si:H interface by means of factor analysis

J.M.M. de Nijs, R.G.K.M. Aarts

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)


The overgrowth of an In2O3 layer by a μc‐Si:H layer, deposited by means of plasma‐enhanced chemical vapour deposition, will inflict the reduction of the In2O3. AES is combination with Ar+ depth profiling is used for the study of the interfacial deterioration that takes place. The results of a factor analysis study after reduction of the In2O3 are presented.

Original languageEnglish
Pages (from-to)628-634
Number of pages7
JournalSurface and interface analysis
Issue number9
Publication statusPublished - 1 Jan 1991
Externally publishedYes

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