Abstract
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003 |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 657-662 |
| Number of pages | 6 |
| ISBN (Print) | 90-73461-39-1 |
| Publication status | Published - 25 Nov 2003 |
| Event | 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003 Conference number: 6 |
Publication series
| Name | |
|---|---|
| Publisher | STW Technology Foundation |
Conference
| Conference | 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 |
|---|---|
| Abbreviated title | SAFE |
| Country | Netherlands |
| City | Veldhoven |
| Period | 25/11/03 → 26/11/03 |
Keywords
- IR-67745
- Actuators
- METIS-213264
- Semiconductor
- Sensors
- System(s)
- ProRISC
- circuit
- EWI-15568
Cite this
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Study on the influence of package parasitics and substrate resistance on the Charged Device Model(CDM) failure levels - possible protection methodology. / Sowariraj, M.S.B.; Smedes, Theo; Salm, Cora; Mouthaan, A.J.; Kuper, F.G.
Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003. Utrecht, The Netherlands : STW, 2003. p. 657-662.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic
TY - GEN
T1 - Study on the influence of package parasitics and substrate resistance on the Charged Device Model(CDM) failure levels - possible protection methodology
AU - Sowariraj, M.S.B.
AU - Smedes, Theo
AU - Salm, Cora
AU - Mouthaan, A.J.
AU - Kuper, F.G.
PY - 2003/11/25
Y1 - 2003/11/25
N2 - Charged Device Model (CDM) type of Electrostatic Discharge (ESD) stress events are becoming the major reason for field returns in the Integrated Circuit (IC) industry especially with downscaling of device dimensions and increased usage of automated handlers. In the case of CDM stress, the IC is both the source of static charge and part of the discharge path. Hence CDM test results are greatly affected by the package properties and the distribution of the protection devices within the die. In this paper we present a systematic approach to understand the actual influence of these factors in the IC during a CDM event. The CDM test set-up is modeled using PSPICE circuit simulator and the discharge waveforms thus obtained are compared with the experimental observations. This model is then used to compare the actual discharge current flowing through the die and the protection structures for two different package materials. A general protection methodology for the ICs during CDM event, applicable to all IC design types, is suggested.
AB - Charged Device Model (CDM) type of Electrostatic Discharge (ESD) stress events are becoming the major reason for field returns in the Integrated Circuit (IC) industry especially with downscaling of device dimensions and increased usage of automated handlers. In the case of CDM stress, the IC is both the source of static charge and part of the discharge path. Hence CDM test results are greatly affected by the package properties and the distribution of the protection devices within the die. In this paper we present a systematic approach to understand the actual influence of these factors in the IC during a CDM event. The CDM test set-up is modeled using PSPICE circuit simulator and the discharge waveforms thus obtained are compared with the experimental observations. This model is then used to compare the actual discharge current flowing through the die and the protection structures for two different package materials. A general protection methodology for the ICs during CDM event, applicable to all IC design types, is suggested.
KW - IR-67745
KW - Actuators
KW - METIS-213264
KW - Semiconductor
KW - Sensors
KW - System(s)
KW - ProRISC
KW - circuit
KW - EWI-15568
M3 - Conference contribution
SN - 90-73461-39-1
SP - 657
EP - 662
BT - Proceedings of the 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003
PB - STW
CY - Utrecht, The Netherlands
ER -