Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

Christoph Baeumer*, Richard Valenta, Christoph Schmitz, Andrea Locatelli, Tevfik Onur Menteş, Steven P. Rogers, Alessandro Sala, Nicolas Raab, Slavomir Nemsak, Moonsub Shim, Claus M. Schneider, Stephan Menzel, Rainer Waser, Regina Dittmann

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

43 Citations (Scopus)

Abstract

A major obstacle for the implementation of redox-based memristive memory or logic technology is the large cycle-to-cycle and device-to-device variability. Here, we use spectromicroscopic photoemission threshold analysis and operando XAS analysis to experimentally investigate the microscopic origin of the variability. We find that some devices exhibit variations in the shape of the conductive filament or in the oxygen vacancy distribution at and around the filament. In other cases, even the location of the active filament changes from one cycle to the next. We propose that both effects originate from the coexistence of multiple (sub)filaments and that the active, current-carrying filament may change from cycle to cycle. These findings account for the observed variability in device performance and represent the scientific basis, rather than prior purely empirical engineering approaches, for developing stable memristive devices.

Original languageEnglish
Pages (from-to)6921-6929
Number of pages9
JournalACS nano
Volume11
Issue number7
DOIs
Publication statusPublished - 25 Jul 2017
Externally publishedYes

Keywords

  • graphene
  • memristive devices
  • PEEM
  • resistive switching
  • variability

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