Submicron patterning of epitaxial PbZr0.52Ti0.48O3 heterostructures

N. Banerjee; Gertjan Koster; Augustinus J.H.M. Rijnders

doi:10.1063/1.4801776

Submicron patterning of epitaxial PbZr0.52Ti0.48O3 heterostructures

N. Banerjee, Gertjan Koster, Augustinus J.H.M. Rijnders

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Abstract

Epitaxial PbZr0.52Ti0.48O3 (PZT 52/48) heterostructures incorporating SrRuO3 electrodes were patterned through a single step epitaxial lift-off technique without using any acidic etching. This procedure enables patterning of high temperature grown perovskite multilayers through the use of a pre-patterned AlOx mask which acts as a high temperature sacrificial template. Ferroelectric properties of structured PZT grown on (001) SrTiO3 substrates as well as on commercially important platinized Si were investigated in capacitor configuration analogous to structures previously prepared through wet etching. In addition, the patterning technique is shown to be compatible with e-beam lithography for preparation of sub-micron device structures consisting of ferroelectric perovskite materials.

Original language	Undefined
Article number	142909
Pages (from-to)	-
Number of pages	5
Journal	Applied physics letters
Volume	102
Issue number	142909
DOIs	https://doi.org/10.1063/1.4801776
Publication status	Published - 2013

Keywords

METIS-295999
IR-89919

Access to Document

10.1063/1.4801776

Cite this

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abstract = "Epitaxial PbZr0.52Ti0.48O3 (PZT 52/48) heterostructures incorporating SrRuO3 electrodes were patterned through a single step epitaxial lift-off technique without using any acidic etching. This procedure enables patterning of high temperature grown perovskite multilayers through the use of a pre-patterned AlOx mask which acts as a high temperature sacrificial template. Ferroelectric properties of structured PZT grown on (001) SrTiO3 substrates as well as on commercially important platinized Si were investigated in capacitor configuration analogous to structures previously prepared through wet etching. In addition, the patterning technique is shown to be compatible with e-beam lithography for preparation of sub-micron device structures consisting of ferroelectric perovskite materials.",

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AU - Banerjee, N.

AU - Koster, Gertjan

AU - Rijnders, Augustinus J.H.M.

PY - 2013

Y1 - 2013

N2 - Epitaxial PbZr0.52Ti0.48O3 (PZT 52/48) heterostructures incorporating SrRuO3 electrodes were patterned through a single step epitaxial lift-off technique without using any acidic etching. This procedure enables patterning of high temperature grown perovskite multilayers through the use of a pre-patterned AlOx mask which acts as a high temperature sacrificial template. Ferroelectric properties of structured PZT grown on (001) SrTiO3 substrates as well as on commercially important platinized Si were investigated in capacitor configuration analogous to structures previously prepared through wet etching. In addition, the patterning technique is shown to be compatible with e-beam lithography for preparation of sub-micron device structures consisting of ferroelectric perovskite materials.

AB - Epitaxial PbZr0.52Ti0.48O3 (PZT 52/48) heterostructures incorporating SrRuO3 electrodes were patterned through a single step epitaxial lift-off technique without using any acidic etching. This procedure enables patterning of high temperature grown perovskite multilayers through the use of a pre-patterned AlOx mask which acts as a high temperature sacrificial template. Ferroelectric properties of structured PZT grown on (001) SrTiO3 substrates as well as on commercially important platinized Si were investigated in capacitor configuration analogous to structures previously prepared through wet etching. In addition, the patterning technique is shown to be compatible with e-beam lithography for preparation of sub-micron device structures consisting of ferroelectric perovskite materials.

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