Submicron patterning of epitaxial PbZr0.52Ti0.48O3 heterostructures

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Abstract

Epitaxial PbZr0.52Ti0.48O3 (PZT 52/48) heterostructures incorporating SrRuO3 electrodes were patterned through a single step epitaxial lift-off technique without using any acidic etching. This procedure enables patterning of high temperature grown perovskite multilayers through the use of a pre-patterned AlOx mask which acts as a high temperature sacrificial template. Ferroelectric properties of structured PZT grown on (001) SrTiO3 substrates as well as on commercially important platinized Si were investigated in capacitor configuration analogous to structures previously prepared through wet etching. In addition, the patterning technique is shown to be compatible with e-beam lithography for preparation of sub-micron device structures consisting of ferroelectric perovskite materials.
Original languageUndefined
Article number142909
Pages (from-to)-
Number of pages5
JournalApplied physics letters
Volume102
Issue number142909
DOIs
Publication statusPublished - 2013

Keywords

  • METIS-295999
  • IR-89919

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