Substrate-induced pairing of Si ad-dimers on the Si(100)surface

Oleg M. Braun, Theo P. Valkering, Joost H.J. van Opheusden, H.J.W. Zandvliet

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The interaction between Si ad-dimers on the Si(100) surface has been studied by total-energy calculations with a three-particle Stillinger-Weber potential. We have found a strong attractive interaction between neighboring Si ad-dimers located in neighboring on-top and deep-channel positions in adjacent substrate dimer rows. This should result in a four-atomic block consisting of two dimers as an important elementary object of the Si(100) kinetics.
Original languageEnglish
Pages (from-to)129-135
Number of pages7
JournalSurface science
Volume384
Issue number1-3
DOIs
Publication statusPublished - 1997

Keywords

  • Surface diffusion
  • Surface structure
  • Vicinal single crystal surfaces

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