Substrate-induced pairing of Si ad-dimers on the Si(100)surface

Oleg M. Braun; Theo P. Valkering; Joost H.J. van Opheusden; Harold J.W. Zandvliet

doi:10.1016/S0039-6028(97)00181-7

Substrate-induced pairing of Si ad-dimers on the Si(100)surface

Oleg M. Braun
, Theo P. Valkering
, Joost H.J. van Opheusden
, Harold J.W. Zandvliet

Physics of Interfaces and Nanomaterials

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The interaction between Si ad-dimers on the Si(100) surface has been studied by total-energy calculations with a three-particle Stillinger-Weber potential. We have found a strong attractive interaction between neighboring Si ad-dimers located in neighboring on-top and deep-channel positions in adjacent substrate dimer rows. This should result in a four-atomic block consisting of two dimers as an important elementary object of the Si(100) kinetics.

Original language	English
Pages (from-to)	129-135
Number of pages	7
Journal	Surface science
Volume	384
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(97)00181-7
Publication status	Published - 1997

Keywords

Surface diffusion
Surface structure
Vicinal single crystal surfaces

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abstract = "The interaction between Si ad-dimers on the Si(100) surface has been studied by total-energy calculations with a three-particle Stillinger-Weber potential. We have found a strong attractive interaction between neighboring Si ad-dimers located in neighboring on-top and deep-channel positions in adjacent substrate dimer rows. This should result in a four-atomic block consisting of two dimers as an important elementary object of the Si(100) kinetics.",

keywords = "Surface diffusion, Surface structure, Vicinal single crystal surfaces",

author = "Braun, \{Oleg M.\} and Valkering, \{Theo P.\} and \{van Opheusden\}, \{Joost H.J.\} and Zandvliet, \{Harold J.W.\}",

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AU - Braun, Oleg M.

AU - Valkering, Theo P.

AU - van Opheusden, Joost H.J.

AU - Zandvliet, Harold J.W.

PY - 1997

Y1 - 1997

N2 - The interaction between Si ad-dimers on the Si(100) surface has been studied by total-energy calculations with a three-particle Stillinger-Weber potential. We have found a strong attractive interaction between neighboring Si ad-dimers located in neighboring on-top and deep-channel positions in adjacent substrate dimer rows. This should result in a four-atomic block consisting of two dimers as an important elementary object of the Si(100) kinetics.

AB - The interaction between Si ad-dimers on the Si(100) surface has been studied by total-energy calculations with a three-particle Stillinger-Weber potential. We have found a strong attractive interaction between neighboring Si ad-dimers located in neighboring on-top and deep-channel positions in adjacent substrate dimer rows. This should result in a four-atomic block consisting of two dimers as an important elementary object of the Si(100) kinetics.

KW - Surface diffusion

KW - Surface structure

KW - Vicinal single crystal surfaces

U2 - 10.1016/S0039-6028(97)00181-7

DO - 10.1016/S0039-6028(97)00181-7

M3 - Article

SN - 0039-6028

VL - 384

SP - 129

EP - 135

JO - Surface science

JF - Surface science

IS - 1-3

ER -

Substrate-induced pairing of Si ad-dimers on the Si(100)surface

Abstract

Keywords

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