Subsurface analysis of semiconductor structures with helium ion microscopy

Raoul van Gastel, G. Hlawacek, Henricus J.W. Zandvliet, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

9 Citations (Scopus)

Abstract

We have used helium ion microscopy to directly track the subsurface diffusion of Pd through a Si stack in a non-invasive manner. The imaging and analysis of semiconductor structures along a direction perpendicular to the substrate is traditionally performed by making cross sections of a sample and viewing those at high magnification in a charged particle beam microscope. Two evident limitations of this approach are the destructive nature of the preparation procedure and the limited amount of information that can be obtained from a planar intersection of the structure. We demonstrate how backscattered helium can be used to monitor the lateral spreading of Pd that is used to create an electrical contact under a 114 nm oxide layer. This non-invasive direct imaging approach cannot only be used in conjunction with an in situ electrical characterization, it also visualizes the actual size and lateral extent of the contact, which is essential for enhancing the reliability of the final structure
Original languageEnglish
Pages (from-to)2104-2109
Number of pages6
JournalMicroelectronics reliability
Volume52
Issue number9-10
DOIs
Publication statusPublished - 2012

Fingerprint

Helium
helium ions
particle beams
magnification
intersections
electric contacts
Microscopic examination
charged particles
helium
microscopes
Ions
Semiconductor materials
microscopy
Imaging techniques
Particle beams
preparation
oxides
cross sections
Charged particles
Oxides

Keywords

  • Optics (see also 3311)Solid state physics (see also 2307)Niet in een andere rubriek onder te brengen
  • METIS-288994
  • IR-84697

Cite this

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title = "Subsurface analysis of semiconductor structures with helium ion microscopy",
abstract = "We have used helium ion microscopy to directly track the subsurface diffusion of Pd through a Si stack in a non-invasive manner. The imaging and analysis of semiconductor structures along a direction perpendicular to the substrate is traditionally performed by making cross sections of a sample and viewing those at high magnification in a charged particle beam microscope. Two evident limitations of this approach are the destructive nature of the preparation procedure and the limited amount of information that can be obtained from a planar intersection of the structure. We demonstrate how backscattered helium can be used to monitor the lateral spreading of Pd that is used to create an electrical contact under a 114 nm oxide layer. This non-invasive direct imaging approach cannot only be used in conjunction with an in situ electrical characterization, it also visualizes the actual size and lateral extent of the contact, which is essential for enhancing the reliability of the final structure",
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Subsurface analysis of semiconductor structures with helium ion microscopy. / van Gastel, Raoul; Hlawacek, G.; Zandvliet, Henricus J.W.; Poelsema, Bene.

In: Microelectronics reliability, Vol. 52, No. 9-10, 2012, p. 2104-2109.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Subsurface analysis of semiconductor structures with helium ion microscopy

AU - van Gastel, Raoul

AU - Hlawacek, G.

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

N1 - SPECIAL ISSUE 23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS

PY - 2012

Y1 - 2012

N2 - We have used helium ion microscopy to directly track the subsurface diffusion of Pd through a Si stack in a non-invasive manner. The imaging and analysis of semiconductor structures along a direction perpendicular to the substrate is traditionally performed by making cross sections of a sample and viewing those at high magnification in a charged particle beam microscope. Two evident limitations of this approach are the destructive nature of the preparation procedure and the limited amount of information that can be obtained from a planar intersection of the structure. We demonstrate how backscattered helium can be used to monitor the lateral spreading of Pd that is used to create an electrical contact under a 114 nm oxide layer. This non-invasive direct imaging approach cannot only be used in conjunction with an in situ electrical characterization, it also visualizes the actual size and lateral extent of the contact, which is essential for enhancing the reliability of the final structure

AB - We have used helium ion microscopy to directly track the subsurface diffusion of Pd through a Si stack in a non-invasive manner. The imaging and analysis of semiconductor structures along a direction perpendicular to the substrate is traditionally performed by making cross sections of a sample and viewing those at high magnification in a charged particle beam microscope. Two evident limitations of this approach are the destructive nature of the preparation procedure and the limited amount of information that can be obtained from a planar intersection of the structure. We demonstrate how backscattered helium can be used to monitor the lateral spreading of Pd that is used to create an electrical contact under a 114 nm oxide layer. This non-invasive direct imaging approach cannot only be used in conjunction with an in situ electrical characterization, it also visualizes the actual size and lateral extent of the contact, which is essential for enhancing the reliability of the final structure

KW - Optics (see also 3311)Solid state physics (see also 2307)Niet in een andere rubriek onder te brengen

KW - METIS-288994

KW - IR-84697

U2 - 10.1016/j.microrel.2012.06.130

DO - 10.1016/j.microrel.2012.06.130

M3 - Article

VL - 52

SP - 2104

EP - 2109

JO - Microelectronics reliability

JF - Microelectronics reliability

SN - 0026-2714

IS - 9-10

ER -