Suitability of integrated protection diodes from diverse semiconductor technologies

Maurice van Wanum, Tom Lebouille, Guido Visser, Frank Edward van Vliet

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

    3 Citations (Scopus)

    Abstract

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.
    Original languageUndefined
    Title of host publicationMicrowave Integrated Circuits Conference, 2009. EuMIC 2009. European
    PublisherIEEE
    Pages294-297
    Number of pages4
    ISBN (Print)978-1-4244-4749-7
    Publication statusPublished - 28 Sep 2009
    Event4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
    Duration: 28 Sep 2009 → 29 Sep 2009
    Conference number: 4

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference4th European Microwave Integrated Circuits Conference, EuMIC 2009
    Abbreviated titleEuMIC
    CountryItaly
    CityRome
    Period28/09/09 → 29/09/09

    Keywords

    • IR-76687
    • EWI-20000
    • METIS-275977

    Access to Document

    Cite this

    van Wanum, M., Lebouille, T., Visser, G., & van Vliet, F. E. (2009). Suitability of integrated protection diodes from diverse semiconductor technologies. In Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European (pp. 294-297). IEEE.