Abstract
Abstract
In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.
Original language | Undefined |
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Title of host publication | Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European |
Publisher | IEEE |
Pages | 294-297 |
Number of pages | 4 |
ISBN (Print) | 978-1-4244-4749-7 |
Publication status | Published - 28 Sep 2009 |
Event | 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy Duration: 28 Sep 2009 → 29 Sep 2009 Conference number: 4 |
Publication series
Name | |
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Publisher | IEEE |
Conference
Conference | 4th European Microwave Integrated Circuits Conference, EuMIC 2009 |
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Abbreviated title | EuMIC |
Country/Territory | Italy |
City | Rome |
Period | 28/09/09 → 29/09/09 |
Keywords
- IR-76687
- EWI-20000
- METIS-275977