Suitability of integrated protection diodes from diverse semiconductor technologies

Maurice van Wanum; Tom Lebouille; Guido Visser; Frank Edward van Vliet

Suitability of integrated protection diodes from diverse semiconductor technologies

Maurice van Wanum, Tom Lebouille, Guido Visser, Frank Edward van Vliet

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.

Original language	Undefined
Title of host publication	Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Publisher	IEEE
Pages	294-297
Number of pages	4
ISBN (Print)	978-1-4244-4749-7
Publication status	Published - 28 Sept 2009
Event	4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy Duration: 28 Sept 2009 → 29 Sept 2009 Conference number: 4

Publication series

Name
Publisher	IEEE

Conference

Conference	4th European Microwave Integrated Circuits Conference, EuMIC 2009
Abbreviated title	EuMIC
Country/Territory	Italy
City	Rome
Period	28/09/09 → 29/09/09

Keywords

IR-76687
EWI-20000
METIS-275977

Access to Document

Cite this

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title = "Suitability of integrated protection diodes from diverse semiconductor technologies",

abstract = "Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.",

keywords = "IR-76687, EWI-20000, METIS-275977",

author = "{van Wanum}, Maurice and Tom Lebouille and Guido Visser and {van Vliet}, {Frank Edward}",

year = "2009",

month = sep,

day = "28",

language = "Undefined",

isbn = "978-1-4244-4749-7",

publisher = "IEEE",

pages = "294--297",

booktitle = "Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European",

address = "United States",

note = "4th European Microwave Integrated Circuits Conference, EuMIC 2009 ; Conference date: 28-09-2009 Through 29-09-2009",

}

van Wanum, M, Lebouille, T, Visser, G & van Vliet, FE 2009, Suitability of integrated protection diodes from diverse semiconductor technologies. in Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European. IEEE, pp. 294-297, 4th European Microwave Integrated Circuits Conference, EuMIC 2009, Rome, Italy, 28/09/09. <http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5296405>

TY - GEN

T1 - Suitability of integrated protection diodes from diverse semiconductor technologies

AU - van Wanum, Maurice

AU - Lebouille, Tom

AU - Visser, Guido

AU - van Vliet, Frank Edward

N1 - Conference code: 4

PY - 2009/9/28

Y1 - 2009/9/28

N2 - Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.

AB - Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for gallium arsenide and gallium nitride based protection diodes.

KW - IR-76687

KW - EWI-20000

KW - METIS-275977

M3 - Conference contribution

SN - 978-1-4244-4749-7

SP - 294

EP - 297

BT - Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

PB - IEEE

T2 - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Y2 - 28 September 2009 through 29 September 2009

ER -