Superconducting phase domains for memory applications

S.V. Bakurskiy, N.V. Klenov, I.I. Soloviev, M..Y. Kupriyanov, Alexandre Avraamovitch Golubov

Research output: Contribution to journalArticleAcademicpeer-review

17 Citations (Scopus)

Abstract

In this work, we study theoretically the properties of S-F/N-sIS type Josephson junctions in the frame of the quasiclassical Usadel formalism. The structure consists of two superconducting electrodes (S), a tunnel barrier (I), a combined normal metal/ferromagnet (N/F) interlayer, and a thin superconducting film (s). We demonstrate the breakdown of a spatial uniformity of the superconducting order in the s-film and its decomposition into domains with a phase shift π. The effect is sensitive to the thickness of the s layer and the widths of the F and N films in the direction along the sIS interface. We predict the existence of a regime where the structure has two energy minima and can be switched between them by an electric current injected laterally into the structure. The state of the system can be non-destructively read by an electric current flowing across the junction.
Original languageEnglish
Article number042602
Pages (from-to)042602-
JournalApplied physics letters
Volume108
Issue number042602
DOIs
Publication statusPublished - 2016

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electric current
superconducting films
Josephson junctions
tunnels
interlayers
phase shift
breakdown
formalism
decomposition
electrodes
metals
energy

Keywords

  • IR-103412
  • METIS-320364

Cite this

Bakurskiy, S. V., Klenov, N. V., Soloviev, I. I., Kupriyanov, M. Y., & Golubov, A. A. (2016). Superconducting phase domains for memory applications. Applied physics letters, 108(042602), 042602-. [042602]. https://doi.org/10.1063/1.4940440
Bakurskiy, S.V. ; Klenov, N.V. ; Soloviev, I.I. ; Kupriyanov, M..Y. ; Golubov, Alexandre Avraamovitch. / Superconducting phase domains for memory applications. In: Applied physics letters. 2016 ; Vol. 108, No. 042602. pp. 042602-.
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Bakurskiy, SV, Klenov, NV, Soloviev, II, Kupriyanov, MY & Golubov, AA 2016, 'Superconducting phase domains for memory applications' Applied physics letters, vol. 108, no. 042602, 042602, pp. 042602-. https://doi.org/10.1063/1.4940440

Superconducting phase domains for memory applications. / Bakurskiy, S.V.; Klenov, N.V.; Soloviev, I.I.; Kupriyanov, M..Y.; Golubov, Alexandre Avraamovitch.

In: Applied physics letters, Vol. 108, No. 042602, 042602, 2016, p. 042602-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Superconducting phase domains for memory applications

AU - Bakurskiy, S.V.

AU - Klenov, N.V.

AU - Soloviev, I.I.

AU - Kupriyanov, M..Y.

AU - Golubov, Alexandre Avraamovitch

PY - 2016

Y1 - 2016

N2 - In this work, we study theoretically the properties of S-F/N-sIS type Josephson junctions in the frame of the quasiclassical Usadel formalism. The structure consists of two superconducting electrodes (S), a tunnel barrier (I), a combined normal metal/ferromagnet (N/F) interlayer, and a thin superconducting film (s). We demonstrate the breakdown of a spatial uniformity of the superconducting order in the s-film and its decomposition into domains with a phase shift π. The effect is sensitive to the thickness of the s layer and the widths of the F and N films in the direction along the sIS interface. We predict the existence of a regime where the structure has two energy minima and can be switched between them by an electric current injected laterally into the structure. The state of the system can be non-destructively read by an electric current flowing across the junction.

AB - In this work, we study theoretically the properties of S-F/N-sIS type Josephson junctions in the frame of the quasiclassical Usadel formalism. The structure consists of two superconducting electrodes (S), a tunnel barrier (I), a combined normal metal/ferromagnet (N/F) interlayer, and a thin superconducting film (s). We demonstrate the breakdown of a spatial uniformity of the superconducting order in the s-film and its decomposition into domains with a phase shift π. The effect is sensitive to the thickness of the s layer and the widths of the F and N films in the direction along the sIS interface. We predict the existence of a regime where the structure has two energy minima and can be switched between them by an electric current injected laterally into the structure. The state of the system can be non-destructively read by an electric current flowing across the junction.

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KW - METIS-320364

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DO - 10.1063/1.4940440

M3 - Article

VL - 108

SP - 042602-

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

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Bakurskiy SV, Klenov NV, Soloviev II, Kupriyanov MY, Golubov AA. Superconducting phase domains for memory applications. Applied physics letters. 2016;108(042602):042602-. 042602. https://doi.org/10.1063/1.4940440