Superconducting thin films of MgB2 on Si by pulsed laser deposition

Alexander Brinkman; D. Mijatovic; Augustinus J.H.M. Rijnders; V. Leca; H.J.H. Smilde; I. Oomen; Alexandre Avraamovitch Golubov; F.J.G. Roesthuis; Sybolt Harkema; Johannes W.M. Hilgenkamp; David H.A. Blank; Horst Rogalla

doi:10.1016/S0921-4534(01)00396-3

Superconducting thin films of MgB2 on Si by pulsed laser deposition

Alexander Brinkman, D. Mijatovic, Augustinus J.H.M. Rijnders, V. Leca, H.J.H. Smilde, I. Oomen, Alexandre Avraamovitch Golubov, F.J.G. Roesthuis, Sybolt Harkema, Johannes W.M. Hilgenkamp, David H.A. Blank, Horst Rogalla

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Abstract

Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and annealed at 600°C. The zero resistance transition temperatures were 11-15.5 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.

Original language	Undefined
Pages (from-to)	1-4
Number of pages	4
Journal	Physica C
Volume	353
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-4534(01)00396-3
Publication status	Published - 2001

Keywords

Superconductivity
Thin Films
METIS-200477
IR-36053
MgB2

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10.1016/S0921-4534(01)00396-3

Cite this

@article{7c3958f5b058408c9788d0c6c038b8be,

title = "Superconducting thin films of MgB2 on Si by pulsed laser deposition",

abstract = "Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and annealed at 600°C. The zero resistance transition temperatures were 11-15.5 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.",

keywords = "Superconductivity, Thin Films, METIS-200477, IR-36053, MgB2",

author = "Alexander Brinkman and D. Mijatovic and Rijnders, {Augustinus J.H.M.} and V. Leca and H.J.H. Smilde and I. Oomen and Golubov, {Alexandre Avraamovitch} and F.J.G. Roesthuis and Sybolt Harkema and Hilgenkamp, {Johannes W.M.} and Blank, {David H.A.} and Horst Rogalla",

year = "2001",

doi = "10.1016/S0921-4534(01)00396-3",

language = "Undefined",

volume = "353",

pages = "1--4",

journal = "Physica C",

issn = "0921-4534",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Superconducting thin films of MgB2 on Si by pulsed laser deposition

AU - Brinkman, Alexander

AU - Mijatovic, D.

AU - Rijnders, Augustinus J.H.M.

AU - Leca, V.

AU - Smilde, H.J.H.

AU - Oomen, I.

AU - Golubov, Alexandre Avraamovitch

AU - Roesthuis, F.J.G.

AU - Harkema, Sybolt

AU - Hilgenkamp, Johannes W.M.

AU - Blank, David H.A.

AU - Rogalla, Horst

PY - 2001

Y1 - 2001

N2 - Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and annealed at 600°C. The zero resistance transition temperatures were 11-15.5 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.

AB - Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and annealed at 600°C. The zero resistance transition temperatures were 11-15.5 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.

KW - Superconductivity

KW - Thin Films

KW - METIS-200477

KW - IR-36053

KW - MgB2

U2 - 10.1016/S0921-4534(01)00396-3

DO - 10.1016/S0921-4534(01)00396-3

M3 - Article

SN - 0921-4534

VL - 353

SP - 1

EP - 4

JO - Physica C

JF - Physica C

IS - 1-2

ER -